New Product Si3464DV Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 e V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition a 0.024 at V = 4.5 V TrenchFET Power MOSFET GS 8 100 % R Tested a g 20 0.028 at V = 2.5 V 11 nC GS 8 Compliant to RoHS Directive 2002/95/EC 0.030 at V = 1.8 V 7.1 GS APPLICATIONS DC/DC Converters Load Switch for Portable Applications TSOP-6 Top View D D 1 6 D (1, 2, 5, 6) 3 mm D D 5 2 Marking Code AZ XXX G S 3 4 Lot Traceability G and Date Code (3) Part Code 2.85 mm (4) S Ordering Information: Si3464DV-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 20 DS V Gate-Source Voltage V 8 GS a T = 25 C 8 C a T = 70 C 8 C = 150 C) Continuous Drain Current (T I J D b, c T = 25 C 7.5 A b, c T = 70 C A 6.0 A Pulsed Drain Current I 20 DM T = 25 C 3 C Continuous Source-Drain Diode Current I S b, c T = 25 C 1.7 A T = 25 C 3.6 C T = 70 C 2.3 C Maximum Power Dissipation P W D b, c T = 25 C 2 A b, c T = 70 C 1.3 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 5 s R Maximum Junction-to-Ambient 50 62.5 thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 28 35 thJF Notes: a. Package limited b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 110 C/W. e. Based on T = 25 C. C Document Number: 65712 www.vishay.com S10-0218-Rev. A, 25-Jan-10 1New Product Si3464DV Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 20 V DS GS D V /T V Temperature Coefficient 23 DS J DS I = 250 A mV/C D V /T V Temperature Coefficient - 2.6 GS(th) J GS(th) V V = V , I = 250 A V Gate-Source Threshold Voltage 0.45 1.0 GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS I A DSS Zero Gate Voltage Drain Current V = 20 V, V = 0 V, T = 70 C 10 DS GS J a I V 5 V, V = 4.5 V A On-State Drain Current 20 D(on) DS GS V = 4.5 V, I = 7.5 A 0.020 0.024 GS D a R V = 2.5 V, I = 7.0 A Drain-Source On-State Resistance 0.023 0.028 DS(on) GS D V = 1.8 V, I = 6.7 A 0.025 0.030 GS D a g V = 10 V, I = 7.5 A Forward Transconductance 17 S fs DS D b Dynamic Input Capacitance C 1065 iss C V = 10 V, V = 0 V, f = 1 MHz Output Capacitance 150 pF oss DS GS Reverse Transfer Capacitance C 70 rss V = 10 V, V = 5 V, I = 7.5 A 12 18 DS GS D Q Total Gate Charge g 11 17 nC Gate-Source Charge Q 1.8 V = 10 V, V = 4.5 V, I = 7.5 A gs DS GS D Q Gate-Drain Charge 1.1 gd R f = 1 MHz Gate Resistance 0.4 2.2 4.4 g t Turn-On Delay Time 510 d(on) V = 10 V, R = 1.7 t Rise Time DD L 15 23 r I 6 A, V = 4.5 V, R = 1 D GEN g t Turn-Off Delay Time 43 65 d(off) t Fall Time 10 20 f ns t Turn-On Delay Time 36 d(on) V = 10 V, R = 1.7 t Rise Time DD L 12 18 r I 6 A, V = 5 V, R = 1 D GEN g Turn-Off Delay Time t 22 33 d(off) t Fall Time 816 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 3 S C A I Pulse Diode Forward Current 20 SM Body Diode Voltage V I = 6 A, V = 0 V 0.75 1.2 V SD S GS t Body Diode Reverse Recovery Time 15 23 ns rr Body Diode Reverse Recovery Charge Q 612 nC rr I = 6 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 8 a ns t Reverse Recovery Rise Time 7 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65712 2 S10-0218-Rev. A, 25-Jan-10