Si3473DV Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen free According to IEC61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.023 at V = - 4.5 V - 7.9 GS TrenchFET Power MOSFET: 1.8 V Rated - 12 0.029 at V = - 2.5 V - 7.0 22 GS Ultra-Low On-Resistance 0.041 at V = - 1.8 V - 5.9 GS Compliant to RoHs Directive 2002/95/EC APPLICATIONS Load Switch TSOP-6 PA Switch Top V iew 1 6 (4) S 3 mm 5 2 3 4 (3) G 2.85 mm Ordering Information: Si3473DV-T1-E3 (Lead (Pb)-free) (1, 2, 5, 6) D Si3473DV-T1-GE3 (Lead (Pb)-free and Halogen free) P-Channel MOSFET Marking Code: 73xxx ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit V Drain-Source Voltage - 12 DS V Gate-Source Voltage V 8 GS T = 25 C - 7.9 - 5.9 A a I Continuous Drain Current (T = 150 C) D J T = 85 C - 5.7 - 4.3 A A I Pulsed Drain Current - 20 DM a I - 1.7 - 0.9 Continuous Source Current (Diode Conduction) S T = 25 C 2.0 1.1 A a P W Maximum Power Dissipation D T = 85 C 1.0 0.6 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 45 62.5 a R Maximum Junction-to-Ambient thJA Steady State 90 110 C/W Maximum Junction-to-Foot (Drain) Steady State R 25 30 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 71937 www.vishay.com S09-2277-Rev. D, 02-Nov-09 1Si3473DV Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = V , I = - 250 A Gate Threshold Voltage - 0.40 - 1 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Body Leakage 100 nA GSS DS GS V = - 12 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 12 V, V = 0 V, T = 85 C - 5 DS GS J a I V = - 5 V, V = - 4.5 V - 20 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 7.9 A 0.019 0.023 GS D a R V = - 2.5 V, I = - 7.0 A 0.024 0.029 Drain-Source On-State Resistance DS(on) GS D V = - 1.8 V, I = - 3 A 0.033 0.041 GS D a g V = - 5 V, I = - 7.9 A 28 S Forward Transconductance fs DS D a V I = - 1.7 A, V = 0 V - 0.7 - 1.2 V Diode Forward Voltage SD S GS b Dynamic Q Total Gate Charge 22 33 g Gate-Source Charge Q V = - 6 V, V = - 4.5 V, I = - 7.9 A 3.2 nC gs DS GS D Q Gate-Drain Charge 5.8 gd Turn-On Delay Time t 25 40 d(on) t Rise Time V = - 6 V, R = 6 50 75 r DD L I - 1 A, V = - 4.5 V, R = 6 Turn-Off Delay Time t 130 200 ns D GEN g d(off) t Fall Time 110 165 f Source-Drain Reverse Recovery Time t I = - 1.7 A, dI/dt = 100 A/s 65 90 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 20 V = 5 V thru 2 V GS 16 16 1.5 V 12 12 8 8 T = 125 C C 4 4 25 C - 55 C 1 V 0 0 0.0 0.5 1.0 1.5 2.0 0 1 234 5 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71937 2 S09-2277-Rev. D, 02-Nov-09 I - Drain Current (A) D I - Drain Current (A) D