New Product Si3483CDV Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition a 0.034 at V = - 10 V - 8 GS TrenchFET Power MOSFET - 30 11.5 nC 0.053 at V = - 4.5 V Compliant to RoHS Directive 2002/95/EC - 7 GS APPLICATIONS Load Switch TSOP-6 (4) S Top View 1 6 3 mm 5 2 (3) G Marking Code AU XXX 3 4 Lot Traceability and Date Code Part Code 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3483CDV-T1-E3 (Lead (Pb)-free) Si3483CDV-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V - 30 DS V Gate-Source Voltage V 20 GS a T = 25 C C - 8 T = 70 C - 7 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A - 6.1 b, c T = 70 C A A - 4.9 Pulsed Drain Current I - 25 DM T = 25 C - 3.5 C I Continuous Source-Drain Diode Current S b, c T = 25 C A - 1.67 T = 25 C 4.2 C T = 70 C 2.7 C P Maximum Power Dissipation W D b, c T = 25 C A 2.0 b, c T = 70 C A 1.3 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 5 s R 55 62.5 Maximum Junction-to-Ambient thJA C/W Steady State R Maximum Junction-to-Foot (Drain) 25 30 thJF Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 110 C/W. Document Number: 68603 www.vishay.com S09-0660-Rev. B, 20-Apr-09 1New Product Si3483CDV Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 30 V DS GS D V Temperature Coefficient V /T - 32 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 5 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 1.0 - 3.0 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 30 V, V = 0 V, T = 85 C - 10 DS GS J a I V - 5 V, V = - 10 V - 20 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 6.1 A 0.027 0.034 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 2 A 0.044 0.053 GS D a g V = - 15 V, I = - 6.1 A 13 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1000 iss C V = - 15 V, V = 0 V, f = 1 MHz Output Capacitance 170 pF oss DS GS C Reverse Transfer Capacitance 140 rss V = - 15 V, V = - 10 V, I = - 6.1 A 22 33 DS GS D Total Gate Charge Q g 11.5 18 nC Q Gate-Source Charge V = - 15 V, V = - 4.5 V, I = - 6.1 A 3.4 gs DS GS D Q Gate-Drain Charge 5.7 gd Gate Resistance R f = 1 MHz 5.6 g t Turn-On Delay Time 45 70 d(on) Rise Time t 135 205 V = - 15 V, R = 3.1 r DD L I - 4.9 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 25 40 d(off) Fall Time t 15 25 f ns t Turn-On Delay Time 10 15 d(on) Rise Time t 15 25 V = - 15 V, R = 3.1 r DD L I - 4.9 A, V = - 10 V, R = 1 t Turn-Off Delay Time D GEN g 30 45 d(off) Fall Time t 10 15 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 3.5 S C A a I - 25 Pulse Diode Forward Current SM V I = - 4.9 A Body Diode Voltage - 0.8 - 1.2 V SD S Body Diode Reverse Recovery Time t 25 50 ns rr Q Body Diode Reverse Recovery Charge 17 35 nC rr I = - 4.9 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 14 a ns t Reverse Recovery Rise Time 11 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68603 2 S09-0660-Rev. B, 20-Apr-09