Si4143DY www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET d V (V) R () MAX. I (A) Q (TYP.) DS DS(on) D g 100 % R and UIS tested g 0.0062 at V = -10 V -25.3 GS Material categorization: -30 0.0074 at V = -6 V -23.2 54 nC GS For definitions of compliance please see 0.0092 at V = -4.5 V -20.8 GS www.vishay.com/doc 99912 SO-8 Single APPLICATIONS D S 5 D Adaptor switch, load switch 6 D D 7 Power management 8 Notebook computers G 4 G 33 22 SS 11 SS D S Top View P-Channel MOSFET Ordering Information: Si4143DY-T1-GE3 (lead (Pb)-free and halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMITUNIT Drain-Source Voltage V -30 DS V Gate-Source Voltage V 25 GS T = 25 C -25.3 C T = 70 C -20.2 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C -17.7 A a, b T = 70 C -14.1 A A Pulsed Drain Current (t = 300 s) I -70 DM T = 25 C -5 C Continuous Source-Drain Diode Current I S a, b T = 25 C -2.4 A Avalanche Current L = 0.1 mH I -30 AS Single Pulse Avalanche Energy E 45 mJ AS T = 25 C 6 C T = 70 C 3.8 C Maximum Power Dissipation P W D a, b T = 25 C 2.9 A a, b T = 70 C 1.9 A Operating Junction and Storage Temperature Range T , T -55 to 150 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT a, c Maximum Junction-to-Ambient t 10 s R 36 43 thJA C/W Maximum Junction-to-Foot Steady State R 16 21 thJF Notes a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 84 C/W. d. Based on T = 25 C. C S14-0910-Rev. A, 28-Apr-14 Document Number: 63242 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Si4143DY www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 A -30 - - V DS GS D V Temperature Coefficient V /T --23 - DS DS J I = -250 A mV/C D V Temperature Coefficient V /T -4.9 - GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = -250 A -1 - -2.5 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 25 V - - 100 nA GSS DS GS V = -30 V, V = 0 V - - -1 DS GS Zero Gate Voltage Drain Current I A DSS V = -30 V, V = 0 V, T = 55 C - - -5 DS GS J a On-State Drain Current I V -10 V, V = -10 V -30 - - A D(on) DS GS V = -10 V, I = -12 A - 0.0051 0.0062 GS D a Drain-Source On-State Resistance R V = -6 V, I = -8 A - 0.0061 0.0074 DS(on) GS D V = -4.5 V, I = -5 A - 0.0076 0.0092 GS D a Forward Transconductance g V = -10 V, I = -15 A - 64 - S fs DS D b Dynamic Input Capacitance C - 6630 - iss Output Capacitance C -V = -15 V, V = 0 V, f = 1 MHz750- pF oss DS GS Reverse Transfer Capacitance C -710- rss V = -15 V, V = -10 V, I = -18 A - 111 167 DS GS D Total Gate Charge Q g -54 81 nC Gate-Source Charge Q -V = -15 V, V = -4.5 V, I = -18 A19.5- gs DS GS D Gate-Drain Charge Q -15.5- gd Gate Resistance R f = 1 MHz 0.5 2.3 4.6 g Turn-On Delay Time t -18 27 d(on) Rise Time t -8 16 r V = -15 V, R = 1.5 DD L I -10 A, V = -10 V, R = 1 Turn-Off Delay Time t -7D GEN g 1107 d(off) Fall Time t -15 23 f ns Turn-On Delay Time t -59 89 d(on) Rise Time t -60 90 r V = -15 V, R = 1.5 DD L I -10 A, V = -4.5 V, R = 1 Turn-Off Delay Time t -5D GEN g 684 d(off) Fall Time t -29 44 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - - -5 S C A Pulse Diode Forward Current I -- -70 SM Body Diode Voltage V I = -10 A, V = 0 V - -0.78 -1.2 V SD S GS Body Diode Reverse Recovery Time t -42 63 ns rr Body Diode Reverse Recovery Charge Q -37 56 nC rr I = -10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t -17- a ns Reverse Recovery Rise Time t -25- b Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-0910-Rev. A, 28-Apr-14 Document Number: 63242 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000