Si4426DY Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.025 at V = 4.5 V 8.5 GS TrenchFET Power MOSFETs 20 Compliant to RoHS Directive 2002/95/EC 0.035 at V = 2.5 V 7.1 GS D SO-8 SD 1 8 SD 2 7 G SD 3 6 GD 4 5 Top View S Ordering Information: Si4426DY-T1-E3 (Lead (Pb)-free) Si4426DY-T1-GE3 (Lead (Pb)-free and Halogen free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V 20 DS V Gate-Source Voltage V 12 GS T = 25 C 8.5 6.5 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 6.8 5.2 A A Pulsed Drain Current (10 s Pulse Width) I 40 DM a I 2.1 2.1 Continuous Source Current (Diode Conduction) S T = 25 C 2.5 1.5 A a P W Maximum Power Dissipation D T = 70 C 1.6 0.9 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 38 50 a Maximum Junction-to-Ambient R thJA Steady State 70 85 C/W Maximum Junction-to-Foot (Drain) Steady State R 20 25 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 71107 www.vishay.com S09-0767-Rev. D, 04-May-09 1Si4426DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Gate Threshold Voltage V V = V , I = 250 A 0.6 1.4 V GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 12 V 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 20 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 4.5 V 40 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 8.5 A 0.019 0.025 GS D a R Drain-Source On-State Resistance DS(on) V = 2.5 V, I = 7.1 A 0.025 0.035 GS D a g V = 10 V, I = 8.5 A 27 S fs DS D Forward Transconductance a V I = 2.1 A, V = 0 V 0.8 1.2 V SD S GS Diode Forward Voltage b Dynamic Total Gate Charge Q 25 50 g Gate-Source Charge Q V = 10 V, V = 4.5 V, I = 8.5 A 6.5 nC gs DS GS D Gate-Drain Charge Q 4 gd Turn-On Delay Time t 40 60 d(on) Rise Time t 40 60 V = 10 V, R = 10 r DD L I 1 A, V = 10 V, R = 6 Turn-Off Delay Time t 90150 D GEN g ns d(off) Fall Time t 40 60 f Source-Drain Reverse Recovery Time t I = 2.1 A, dI/dt = 100 A/s 40 60 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 40 40 V = 5 V thru 3 V GS 2.5 V 30 30 20 20 2 V T = 125 C C 10 10 25 C 1, 1.5 V - 55 C 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.5 1.0 1.5 2.0 2.5 3.0 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71107 2 S09-0767-Rev. D, 04-May-09 I - Drain Current (A) D I - Drain Current (A) D