Si4511DY Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.0145 at V = 10 V 9.6 GS TrenchFET Power MOSFET N-Channel 20 Compliant to RoHS directive 2002/95/EC 0.017 at V = 4.5 V 8.6 GS 0.033 at V = - 4.5 V - 6.2 GS APPLICATIONS P-Channel - 20 0.050 at V = - 2.5 V - 5 GS Level Shift Load Switch SO-8 D S D S 1 1 8 1 1 2 G D 1 2 7 1 S D 3 6 2 2 G 2 G D 2 4 5 2 G 1 Top View Ordering Information: Si4511DY-T1-E3 (Lead (Pb)-free) D S 2 1 Si4511DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A N-Channel P-Channel Parameter Symbol Unit 10 s Steady State 10 s Steady State Drain-Source Voltage V 20 - 20 DS V Gate-Source Voltage V 16 12 GS T = 25 C 9.6 7.2 - 6.2 - 4.6 A a, b I Continuous Drain Current (T = 150 C) D J T = 70 C 7.7 5.8 - 4.9 - 3.7 A A Pulsed Drain Current I 40 - 40 DM a I 1.7 0.9 - 1.7 - 0.9 Continuous Source Current (Diode Conduction) S T = 25 C 2 1.1 2 1.1 A a P W Maximum Power Dissipation D T = 70 C 1.3 0.7 1.3 0.7 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Unit Typ. Max. Typ. Max. t 10 s 50 62.5 50 62.5 a R Maximum Junction-to-Ambient thJA Steady State 85 110 90 110 C/W Maximum Junction-to-Foot (Drain) Steady State R 30 40 30 35 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. b. t 10 s. Document Number: 72223 www.vishay.com S09-0867-Rev. E, 18-May-09 1Si4511DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V = V , I = 250 A N-Ch 0.6 1.8 DS GS D V Gate Threshold Voltage V GS(th) V = V , I = - 250 A P-Ch - 0.6 - 1.4 DS GS D V = 0 V, V = 16 V N-Ch 100 DS GS I Gate-Body Leakage nA GSS V = 0 V, V = 12 V P-Ch 100 DS GS V = 20 V, V = 0 V N-Ch 1 DS GS V = - 20 V, V = 0 V P-Ch - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 20 V, V = 0 V, T = 55 C N-Ch 5 DS GS J V = - 20 V, V = 0 V, T = 55 C P-Ch - 5 DS GS J V = 5 V, V = 10 V N-Ch 40 DS GS b I A On-State Drain Current D(on) V = - 5 V, V = - 4.5 V P-Ch - 40 DS GS V = 10 V, I = 9.6 A N-Ch 0.0115 0.0145 GS D V = - 4.5 V, I = - 6.2 A P-Ch 0.022 0.033 GS D b R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 8.6 A N-Ch 0.0135 0.017 GS D V = - 2.5 V, I = - 5 A P-Ch 0.035 0.050 GS D V = 15 V, I = 9.6 A N-Ch 33 DS D b g S Forward Transconductance fs V = - 15 V, I = - 6.2 A P-Ch 17 DS D I = 1.7 A, V = 0 V N-Ch 0.8 1.2 S GS b V V Diode Forward Voltag SD I = - 1.7 A, V = 0 V P-Ch - 0.8 - 1.2 S GS a Dynamic N-Ch 11.5 18 Q Total Gate Charge g N-Channel P-Ch 17 20 V = 10 V, V = 4.5 V, I = 9.6 A DS GS D N-Ch 3.7 Q Gate-Source Charge nC gs P-Ch 4.1 P-Channel N-Ch 3.3 V = - 10 V, V = - 4.5 V, I = - 6.2 A DS GS D Q Gate-Drain Charge gd P-Ch 4.3 N-Ch 12 20 t Turn-On Delay Time d(on) N-Channel P-Ch 25 40 V = 10 V, R = 10 DD L N-Ch 12 20 t Rise Time r I 1 A, V = 10 V, R = 6 D GEN g P-Ch 30 45 N-Ch 55 85 P-Channel t Turn-Off Delay Time d(off) ns P-Ch 70 105 V = - 10 V, R = 10 DD L N-Ch 15 25 I - 1 A, V = - 4.5 V, R = 6 D GEN g t Fall Time f P-Ch 50 75 I = 1.7 A, dI/dt = 100 A/s N-Ch 50 100 F Source-Drain Reverse Recovery Time t rr I = - 1.7 A, dI/dt = 100 A/s P-Ch 40 80 F Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72223 2 S09-0867-Rev. E, 18-May-09