Si4532ADY Vishay Siliconix N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Available DS DS(on) D 0.053 at V = 10 V TrenchFET Power MOSFETs 4.9 GS N-Channel 30 100 % R Tested 0.075 at V = 4.5 V g 4.1 GS Compliant to RoHS Directive 2002/95/EC 0.080 at V = - 10 V - 3.9 GS P-Channel - 30 0.135 at V = - 4.5 V - 3.0 GS S D 1 2 SO-8 S D 1 1 8 1 G D 1 2 7 1 G 2 S D 2 3 6 2 G 1 G D 4 5 2 2 Top View S D 2 1 Ordering Information: Si4532ADY-T1-E3 (Lead (Pb-free) P-Channel MOSFET N-Channel MOSFET Si4532ADY-T1-GE3 (Lead (Pb-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A N-Channel P-Channel Parameter Symbol Unit 10 s Steady State 10 s Steady State V Drain-Source Voltage 30 - 30 DS V V Gate-Source Voltage 20 20 GS T = 25 C 4.9 3.7 - 3.9 - 3.0 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 3.9 2.9 - 3.1 - 2.4 A A I Pulsed Drain Current 20 DM a I 1.7 0.94 - 1.7 - 1.0 Continuous Source Current (Diode Conduction) S T = 25 C 21.13 2 1.2 A a P W Maximum Power Dissipation D T = 70 C 1.3 0.73 1.3 0.76 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Unit Typ. Max. Typ. Max. t 10 s 55 62.5 54 62.5 a R Maximum Junction-to-Ambient thJA Steady State 90 110 87 105 C/W R Maximum Junction-to-Foot (Drain) Steady State 40 50 34 45 thJF Note: a. Surface mounted on 1 x 1 FR4 board. Document Number: 71133 www.vishay.com S11-1908-Rev. D, 26-Sep-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si4532ADY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V = V , I = 250 A N-Ch 1 DS GS D V Gate Threshold Voltage V GS(th) V = V , I = - 250 A P-Ch - 1 DS GS D V = 0 V, V = 20 V N-Ch 100 DS GS I Gate-Body Leakage nA GSS V = 0 V, V = 20 V P-Ch 100 DS GS V = 30 V, V = 0 V N-Ch 1 DS GS V = - 30 V, V = 0 V P-Ch - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C N-Ch 5 DS GS J V = - 30 V, V = 0 V, T = 55 C P-Ch - 5 DS GS J V 5 V, V = 10 V N-Ch 20 DS GS a I A On-State Drain Current D(on) V - 5 V, V = - 10 V P-Ch - 20 DS GS V = 10 V, I = 4.9 A N-Ch 0.044 0.053 GS D V = - 10 V, I = - 3.9 A P-Ch 0.062 0.080 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 4.1 A N-Ch 0.062 0.075 GS D V = - 4.5 V, I = - 3 A P-Ch 0.105 0.135 GS D V = 15 V, I = 4.9 A N-Ch 11 DS D a g S Forward Transconductance fs V = - 15 V, I = - 2.5 A P-Ch 5 DS D I = 1.7 A, V = 0 V N-Ch 0.80 1.2 S GS a V V Diode Forward Voltage SD I = - 1.7 A, V = 0 V P-Ch - 0.82 - 1.2 S GS b Dynamic N-Ch 8 16 Q Total Gate Charge g N-Channel P-Ch 10 20 V = 10 V, V = 10 V, I = 4.9 A DS GS D N-Ch 1.4 Q Gate-Source Charge nC gs P-Ch 2 P-Channel N-Ch 1.2 V = - 4 V, V = - 10 V, I = - 3.9 A DS GS D Q Gate-Drain Charge gd P-Ch 1.9 N-Ch 0.4 1.6 3.2 R Gate Resistancee f = 1 MHz g P-Ch 1.5 6.2 12 N-Ch 12 20 t Turn-On Delay Time d(on) N-Channel P-Ch 8 15 V = 10 V, R = 10 DD L N-Ch 10 20 t Rise Time r I 1 A, V = 10 V, R = 6 D GEN g P-Ch 9 18 N-Ch 23 45 P-Channel t Turn-Off Delay Time d(off) ns P-Ch 21 40 V = - 10 V, R = 10 DD L N-Ch 8 15 I - 1 A, V = - 10 V, R = 6 D GEN g t Fall Time f P-Ch 10 20 I = 1.7 A, dI/dt = 100 A/s N-Ch 25 40 F Source-Drain Reverse Recovery Time t rr I = - 1.7 A, dI/dt = 100 A/s P-Ch 27 40 F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71133 2 S11-1908-Rev. D, 26-Sep-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000