Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge (N- and P-Channel) FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.020 at V = 4.5 V 9.1 GS TrenchFET Power MOSFET N-Channel 20 0.030 at V = 2.5 V 7.5 GS Compliant to RoHS Directive 2002/95/EC 0.060 at V = - 4.5 V - 5.3 GS P-Channel - 20 0.100 at V = - 2.5 V - 4.1 GS S 2 SO-8 G 2 S D 1 1 8 G D 1 2 7 D S D 2 3 6 G D 4 5 2 G 1 Top View Ordering Information: Si4500BDY-T1-E3 (Lead (Pb)-free) S 1 Si4500BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A N-Channel P-Channel Parameter Symbol Unit 10 s Steady State 10 s Steady State V Drain-Source Voltage 20 - 20 DS V V Gate-Source Voltage 12 12 GS T = 25 C 9.1 6.6 - 5.3 - 3.8 A a,b I Continuous Drain Current (T = 150 C) D J T = 70 C 7.3 5.3 - 4.9 - 3.1 A A Pulsed Drain Current I 30 - 20 DM a,b I 2.1 1.1 - 2.1 - 1.1 Continuous Source Current (Diode Conduction) S T = 25 C 2.5 1.3 2.5 1.3 A a,b P W Maximum Power Dissipation D T = 70 C 1.6 0.8 1.6 0.8 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Unit Typ. Max. Typ. Max. t 10 s 40 50 41 50 a R Maximum Junction-to-Ambient thJA Steady State 75 95 75 95 C/W R Maximum Junction-to-Foot (Drain) Steady State 20 22 23 26 thJF Notes: a. Surface Mounted on FR4 board. b. t 10 s. Document Number: 72281 www.vishay.com S09-0705-Rev. D, 27-Apr-09 1Si4500BDY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J a Typ. Parameter Symbol Test Conditions Min. Max. Unit Static V = V , I = 250 A N-Ch 0.6 1.5 DS GS D V Gate Threshold Voltage V GS(th) V = V , I = - 250 A P-Ch - 0.6 - 1.5 DS GS D N-Ch 100 I V = 0 V, V = 12 V Gate-Body Leakage nA GSS DS GS P-Ch 100 V = 20 V, V = 0 V N-Ch 1 DS GS V = - 20 V, V = 0 V P-Ch - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 20 V, V = 0 V, T = 55 C N-Ch 5 DS GS J V = - 20 V, V = 0 V, T = 55 C P-Ch - 5 DS GS J V = 5 V, V = 4.5 V N-Ch 30 DS GS b I A On-State Drain Current D(on) V = - 5 V, V = - 4.5 V P-Ch - 20 DS GS V = 4.5 V, I = 9.1 A N-Ch 0.016 0.020 GS D V = - 4.5 V, I = - 5.3 A P-Ch 0.048 0.060 GS D b R Drain-Source On-State Resistance DS(on) V = 2.5 V, I = 3.3 A N-Ch 0.024 0.030 GS D V = - 2.5 V, I = - 1 A P-Ch 0.082 0.100 GS D V = 15 V, I = 9.1 A N-Ch 29 DS D b g S Forward Transconductance fs V = - 15 V, I = - 5.3 A P-Ch 11 DS D I = 2.1 A, V = 0 V N-Ch 0.8 1.2 S GS b V V Diode Forward Voltage SD I = - 2.1 A, V = 0 V P-Ch - 0.8 - 1.2 S GS a Dynamic N-Ch 11 17 Q Total Gate Charge g N-Channel P-Ch 6.0 9 V = 10 V, V = 4.5 V, I = 9.1 A DS GS D N-Ch 2.5 Q Gate-Source Charge nC gs P-Ch 1.3 P-Channel N-Ch 3.2 V = - 10 V, V = - 4.5 V, I = - 5.3 A DS GS D Q Gate-Drain Charge gd P-Ch 1.6 N-Ch 35 50 t Turn-On Delay Time d(on) N-Channel P-Ch 20 30 V = 10 V, R = 10 DD L N-Ch 50 80 t Rise Time r I 1 A, V = 10 V, R = 6 D GEN g P-Ch 35 60 N-Ch 31 50 P-Channel t Turn-Off Delay Time d(off) ns P-Ch 55 85 V = - 10 V, R = 10 DD L N-Ch 15 30 I - 1 A, V = - 4.5 V, R = 6 D GEN g t Fall Time f P-Ch 35 60 I = 2.1 A, dI/dt = 100 A/s N-Ch 30 60 F t Source-Drain Reverse Recovery Time rr I = - 2.1 A, dI/dt = 100 A/s P-Ch 25 50 F Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72281 2 S09-0705-Rev. D, 27-Apr-09