X-On Electronics has gained recognition as a prominent supplier of SI4483ADY-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4483ADY-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI4483ADY-T1-GE3 Vishay

SI4483ADY-T1-GE3 electronic component of Vishay
SI4483ADY-T1-GE3 Vishay
SI4483ADY-T1-GE3 MOSFETs
SI4483ADY-T1-GE3  Semiconductors

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Part No. SI4483ADY-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET -30V Vds 25V Vgs SO-8
Datasheet: SI4483ADY-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.496 ea
Line Total: USD 1.5 
Availability - 34299
Ship by Fri. 03 Jan to Tue. 07 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
309
Ship by Tue. 14 Jan to Fri. 17 Jan
MOQ : 1
Multiples : 1
1 : USD 1.1557
10 : USD 0.9901
30 : USD 0.8863
100 : USD 0.7814
500 : USD 0.7324
1000 : USD 0.7125

34299
Ship by Fri. 03 Jan to Tue. 07 Jan
MOQ : 1
Multiples : 1
1 : USD 1.496
10 : USD 1.0131
100 : USD 0.7117
500 : USD 0.6369
1000 : USD 0.55
2500 : USD 0.5126
5000 : USD 0.4807
25000 : USD 0.4664

1837
Ship by Fri. 03 Jan to Tue. 07 Jan
MOQ : 1
Multiples : 0
1 : USD 1.694
5 : USD 1.526
14 : USD 1.218
39 : USD 1.148
500 : USD 1.12

   
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We are delighted to provide the SI4483ADY-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4483ADY-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si4483ADY Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 d V (V) R ( )I (A) Q (Typ.) DS DS(on) D g Definition 0.0088 at V = - 10 V - 19.2 GS TrenchFET Power MOSFET - 30 44.8 nC 0.0153 at V = - 4.5 V - 14.6 GS 100 % R Tested g 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS S SO-8 Adaptor Switch S 1 8 D S D 2 7 G S 3 6 D G D 4 5 Top View D Ordering Information: Si4483ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V - 30 DS V V Gate-Source Voltage 25 GS T = 25 C - 19.2 C T = 70 C - 15.4 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 13.5 A a, b T = 70 C - 10.9 A A I - 70 Pulsed Drain Current DM - 4.9 = 25 C T C Continuous Source-Drain Diode Current I S a, b T = 25 C - 2.4 A I Avalanche Current 20 AS L = 0.1 mH Single-Pulse Avalanche Energy E 20 mJ AS T = 25 C 5.9 C T = 70 C 3.8 C Maximum Power Dissipation P W D a, b T = 25 C 2.9 A a, b T = 70 C 1.9 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, c R Maximum Junction-to-Ambient t 10 s 33 42 thJA C/W Steady State R Maximum Junction-to-Foot 16 21 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 85 C/W. d. Based on T = 25 C. C Document Number: 68982 www.vishay.com S10-2543-Rev. B, 08-Nov-10 1Si4483ADY Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 30 V DS GS D V Temperature Coefficient V /T - 30 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 5.3 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 1.2 - 2.1 - 2.6 V GS(th) DS GS D I V = 0 V, V = 25 V Gate-Source Leakage 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 30 V, V = 0 V, T = 55 C - 5 DS GS J a I V - 10 V, V = - 10 V - 30 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 10 A 0.0073 0.0088 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 7 A 0.0127 0.0153 GS D a g V = - 10 V, I = - 10 A 32 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 3900 iss C V = - 15 V, V = 0 V, f = 1 MHz Output Capacitance 715 pF oss DS GS C Reverse Transfer Capacitance 645 rss V = - 15 V, V = - 10 V, I = - 10 A 90 135 DS GS D Q Total Gate Charge g 44.8 68 nC Q V = - 15 V, V = - 4.5 V, I = - 10 A Gate-Source Charge 12.2 gs DS GS D Q Gate-Drain Charge 21.7 gd R Gate Resistance f = 1 MHz 0.4 1.8 3.6 g Turn-On Delay Time t 14 28 d(on) t Rise Time V = - 15 V, R = 1.5 13 25 r DD L I - 10 A, V = - 10 V, R = 1 t Turn-Off DelayTime D GEN g 49 90 d(off) Fall Time t 13 25 f ns t Turn-On Delay Time 70 120 d(on) Rise Time t 150 280 V = - 15 V, R = 1.5 r DD L I - 10 A, V = - 4.5 V, R = 1 t Turn-Off DelayTime D GEN g 43 80 d(off) t Fall Time 28 55 f Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current I T = 25 C - 4.9 S C A Pulse Diode Forward Current I - 70 SM Body Diode Voltage V I = - 3 A, V = 0 V - 0.72 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 41 70 ns rr Body Diode Reverse Recovery Charge Q 41 70 nC rr I = - 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 18 a ns Reverse Recovery Rise Time t 23 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68982 2 S10-2543-Rev. B, 08-Nov-10

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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