Si4477DY Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 d V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.0062 at V = - 4.5 V - 26.6 TrenchFET Power MOSFET GS - 20 59 nC 100 % R Tested 0.0105 at V = - 2.5 V - 20.6 g GS 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch Adapter Switch - Notebook SO-8 S - Game Station S 1 8 D S D 2 7 G S 3 6 D G D 4 5 Top View D Ordering Information: Si4477DY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V - 20 DS V V Gate-Source Voltage 12 GS T = 25 C - 26.6 C T = 70 C - 21.3 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 18 A a, b T = 70 C - 14.5 A A I - 60 Pulsed Drain Current DM - 5.5 T = 25 C C I Continuous Source-Drain Diode Current S a, b T = 25 C - 2.5 A Avalanche Current I 30 AS L = 0.1 mH Single-Pulse Avalanche Energy E 45 mJ AS T = 25 C 6.6 C T = 70 C 4.2 C P Maximum Power Dissipation W D a, b T = 25 C 3 A a, b T = 70 C 1.95 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, c Maximum Junction-to-Ambient t 10 s R 34 41 thJA C/W R Maximum Junction-to-Foot Steady State 15 19 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 80 C/W. d. Based on T = 25 C. C Document Number: 64829 www.vishay.com S09-0858-Rev. A, 18-May-09 1Si4477DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 20 V DS GS D V Temperature Coefficient V /T - 13 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 4.1 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 0.6 - 1.5 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 12 V 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 10 V, V = - 4.5 V - 30 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 18 A 0.0051 0.0062 GS D a R Drain-Source On-State Resistance DS(on) V = - 2.5 V, I = - 14 A 0.0085 0.0105 GS D a g V = - 10 V, I = - 3.5 A 10 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 4600 iss C V = - 10 V, V = 0 V, f = 1 MHz Output Capacitance 980 pF oss DS GS C Reverse Transfer Capacitance 175 rss V = - 10 V, V = - 10 V, I = - 18 A 125 190 DS GS D Q Total Gate Charge g 59 90 nC Q V = - 10 V, V = - 4.5 V, I = - 18 A Gate-Source Charge 10 gs DS GS D Q Gate-Drain Charge 19 gd R Gate Resistance f = 1 MHz 1.3 2.6 g t Turn-On Delay Time 13 20 d(on) t V = - 10 V, R = 10 Rise Time 10 20 r DD L t I - 1 A, V = - 10 V, R = 1 Turn-Off DelayTime 100 150 d(off) D GEN g t Fall Time 25 40 f ns t Turn-On Delay Time 42 60 d(on) t V = - 10 V, R = 10 Rise Time 42 60 r DD L t I - 1 A, V = - 4.5 V, R = 1 Turn-Off DelayTime 100 150 d(off) D GEN g t Fall Time 42 60 f Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current I T = 25 C - 5.5 S C A Pulse Diode Forward Current I - 60 SM Body Diode Voltage V I = - 5 A, V = 0 V - 0.75 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 42 60 ns rr Body Diode Reverse Recovery Charge Q 40 60 nC rr I = - 3.5 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 20 a ns Reverse Recovery Rise Time t 22 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 64829 2 S09-0858-Rev. A, 18-May-09
