X-On Electronics has gained recognition as a prominent supplier of SI4480DY-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4480DY-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI4480DY-T1-E3 Vishay

SI4480DY-T1-E3 electronic component of Vishay

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Part No.	SI4480DY-T1-E3
Manufacturer:	Vishay
Category:	MOSFETs
Description:	MOSFET 80V 6A 2.5W Integrated wireless transceiver with low-power consumption for 433 MHz applications.
Datasheet:	SI4480DY-T1-E3 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

2500: USD 0.8424 ea
Line Total: USD 2106

Availability - 0

MOQ: 2500 Multiples: 1
Pack Size: 1

SI4480DY-T1-E3 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Mon. 02 Dec to Fri. 06 Dec MOQ : 2500 Multiples : 1	2500 : USD 0.8424

We are delighted to provide the SI4480DY-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4480DY-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI4480DY-T1-E3 is a two-terminal, N-channel logic level enhancement mode field effect transistor (FET) produced by Vishay Siliconix. This device is optimized for low voltage applications and offers very low RDS(ON). Additionally, it is designed for use in a variety of applications, including audio, cellular, and personal digital assistant (PDA) items. This FET has an operating voltage (VGS) range from -2V to +2V and a low threshold voltage (VGS(th)) of 1.2V max. Maximum current rating is 0.3A at 25°C and maximum pulse current rating at 125°C is 0.75A. Its breakdown voltage is typically 80V and its typical drain-source on-resistance is 5.6mO. Power dissipation is typically 56mW at 25°C junction temperature. This device is supplied in a SOT-23 plastic surface mount (SMT) package featuring three source pins.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer Vishay Vishay
Product Category MOSFETs MOSFETs
RoHS - XON E E
Id - Continuous Drain Current 6 A 6 A
Vds - Drain-Source Breakdown Voltage 80 V 80 V
Rds On - Drain-Source Resistance 35 mOhms 35 mOhms
Transistor Polarity N - Channel N - Channel
Vgs - Gate-Source Breakdown Voltage 20 V 20 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 2.5 W 2.5 W
Mounting Style Smd/Smt Smd/Smt
Package / Case SOIC - 8 Narrow SOIC - 8 Narrow
Packaging Reel Reel
Channel Mode Enhancement Enhancement
Configuration Single Single
Brand Vishay / Siliconix Vishay / Siliconix
Fall Time 22 ns 22 ns
Rise Time 12.5 ns 12.5 ns
Factory Pack Quantity : 2500 2500
Typical Turn-Off Delay Time 52 ns 52 ns