Si4486EY Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.025 at V = 10 V 7.9 GS TrenchFET Power MOSFETs 100 0.028 at V = 6.0 V 7.5 GS 175 C Maximum Junction Temperature PWM Optimized Compliant to RoHS Directive 2002/95/EC D SO-8 S D 1 8 S D 2 7 S D 3 6 G G D 4 5 Top View S Ordering Information: Si4486EY-T1-E3 (Lead (Pb)-free) Si4486EY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage 100 DS V Gate-Source Voltage V 20 GS T = 25 C 7.9 5.4 A a I Continuous Drain Current (T = 175 C) D J T = 85 C 6.1 4.2 A A I Pulsed Drain Current 40 DM I Avalanche Current 30 AR L = 0.1 mH E Repetitive Avalanche Energy (Duty Cycle 1 %) 45 mJ AR a I 3.1 1.5 A Continuous Source Current (Diode Conduction) S T = 25 C 3.8 1.8 A a P W Maximum Power Dissipation D T = 85 C 2.3 1.1 A T , T Operating Junction and Storage Temperature Range - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 33 40 a R Maximum Junction-to-Ambient thJA Steady State 70 85 C/W R Maximum Junction-to-Foot (Drain) Steady State 17 21 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 71234 www.vishay.com S09-1341-Rev. E, 13-Jul-09 1Si4486EY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 2V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 80 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 80 V, V = 0 V, T = 85 C 20 DS GS J a I V 5 V, V = 10 V 40 A On-State Drain Current D(on) DS GS V = 10 V, I = 7.9 A 0.021 0.025 GS D a R Drain-Source On-State Resistance DS(on) V = 6.0 V, I = 7.5 A 0.023 0.028 GS D a g V = 15 V, I = 7.9 A 35 S Forward Transconductance fs DS D a V I = 3.1 A, V = 0 V 0.8 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 36 44 g Q V = 50 V, V = 10 V, I = 7.9 A Gate-Source Charge 10 nC gs DS GS D Gate-Drain Charge Q 8.6 gd R Gate Resistance 0.5 1.27 2.2 g Turn-On Delay Time t 20 40 d(on) t Rise Time V = 50 V, R = 50 10 20 r DD L I 1 A, V = 10 V, R = 6 Turn-Off Delay Time t 46 90 ns D GEN g d(off) t Fall Time 26 50 f Source-Drain Reverse Recovery Time t I = 3.1 A, dI/dt = 100 A/s 50 80 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 40 40 V = 10 V thru 6 V GS 32 5 V 32 24 24 16 16 T = 150 C C 8 8 25 C - 55 C 4 V 0 0 0 1234 5 0 123 456 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71234 2 S09-1341-Rev. E, 13-Jul-09 I - Drain Current (A) D I - Drain Current (A) D