Si4501ADY Vishay Siliconix Complementary (N- and P-Channel) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.018 at V = 10 V 8.8 GS TrenchFET Power MOSFET N-Channel 30 0.027 at V = 4.5 V 7.0 GS Compliant to RoHS Directive 2002/95/EC 0.042 at V = - 4.5 V - 5.7 GS P-Channel - 8 0.060 at V = - 2.5 V - 4.8 APPLICATIONS GS Level Shift Load Switch S 2 SO-8 G 2 S D 1 8 1 G D 1 2 7 D S D 3 6 2 G D 2 4 5 G 1 Top View Ordering Information: Si4501ADY-T1-E3 (Lead (Pb)-free) Si4501ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) S 1 ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A N-Channel P-Channel Parameter Symbol 10 s Steady State 10 s Steady State Unit V Drain-Source Voltage 30 - 8 DS V V Gate-Source Voltage 20 8 GS T = 25 C 8.8 6.3 - 5.7 - 4.1 A a, b I Continuous Drain Current (T = 150 C) D J T = 70 C 7 5.2 - 4.5 - 3.3 A A Pulsed Drain Current I 30 - 30 DM a, b I 1.8 1.0 - 1.8 - 1.0 Continuous Source Current (Diode Conduction) S T = 25 C 2.5 1.3 2.5 1.3 A a, b P W Maximum Power Dissipation D T = 70 C 1.6 0.84 1.6 0.84 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Typ. Max. Typ. Max. Unit t 10 s 40 50 42 50 a R Maximum Junction-to-Ambient thJA Steady State 75 95 76 95 C/W R Maximum Junction-to-Foot (Drain) Steady State 18 23 21 26 thJF Notes: a. Surface Mounted on FR4 board. b. t 10 s. Document Number: 71922 www.vishay.com S09-0868-Rev. D, 18-May-09 1Si4501ADY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J a Typ. Parameter Symbol Test Conditions Min. Max. Unit Static V = V , I = 250 A N-Ch 0.8 1.8 DS GS D V Gate Threshold Voltage V GS(th) V = V , I = - 250 A P-Ch - 0.45 - 1.0 DS GS D V = 0 V, V = 20 V N-Ch 100 DS GS I Gate-Body Leakage nA GSS V = 0 V, V = 8 V P-Ch 100 DS GS V = 30 V, V = 0 V N-Ch 1 DS GS V = - 8 V, V = 0 V P-Ch - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C N-Ch 5 DS GS J V = - 8 V, V = 0 V, T = 55 C P-Ch - 5 DS GS J V = 5 V, V = 10 V N-Ch 30 DS GS b I A On-State Drain Current D(on) V = - 5 V, V = - 4.5 V P-Ch - 20 DS GS V = 10 V, I = 8.8 A N-Ch 0.015 0.018 GS D V = - 4.5 V, I = - 5.7 A P-Ch 0.030 0.042 GS D b R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 7.0 A N-Ch 0.022 0.027 GS D V = - 2.5 V, I = - 4.8 A P-Ch 0.048 0.060 GS D V = 15 V, I = 8.8 A N-Ch 18 DS D b g S Forward Transconductance fs V = - 15 V, I = - 5.7 A P-Ch 12 DS D I = 1.8 A, V = 0 V N-Ch 0.73 1.1 S GS b V V Diode Forward Voltage SD I = - 1.8 A, V = 0 V P-Ch - 0.75 - 1.1 S GS a Dynamic N-Ch 11.5 20 Q Total Gate Charge g N-Channel P-Ch 13.5 20 V = 15 V, V = 5 V, I = 8.8 A DS GS D N-Ch 3 Q Gate-Source Charge nC gs P-Ch 2.2 P-Channel N-Ch 4 V = - 4 V, V = - 5 V, I = - 5.7 A DS GS D Q Gate-Drain Charge gd P-Ch 3 N-Ch 15 22 t Turn-On Delay Time d(on) N-Channel P-Ch 21 40 V = 15 V, R = 15 DD L N-Ch 8 15 t Rise Time r I 1 A, V = 10 V, R = 6 D GEN G P-Ch 45 70 N-Ch 35 50 P-Channel t Turn-Off Delay Time ns d(off) P-Ch 60 100 V = - 4 V, R = 4 DD L N-Ch 10 20 I - 1 A, V = - 4.5 V, R = 6 D GEN g t Fall Time f P-Ch 55 85 N-Ch 30 60 t I = 1.8 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time rr F P-Ch 50 100 Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71922 2 S09-0868-Rev. D, 18-May-09