Si4501BDY Vishay Siliconix Complementary (N- and P-Channel) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) DS DS(on) I (A) g D Definition 0.017 at V = 10 V 12 GS TrenchFET Power MOSFET N-Channel 30 7.9 0.020 at V = 4.5 V 11 GS 100 % R and UIS Tested g 0.027 at V = - 4.5 V - 8 Compliant to RoHS Directive 2002/95/EC GS P-Channel - 8 16.5 0.037 at V = - 2.5 V - 6.8 GS APPLICATIONS Level Shift S 2 Load Switch SO-8 G 2 S D 1 1 8 G D 1 2 7 D S D 2 3 6 G D 2 4 5 G 1 Top View Ordering Information: Si4501BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) S 1 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol N-ChannelP-ChannelUnit V Drain-Source Voltage 30 - 8 DS V Gate-Source Voltage V 20 8 GS T = 25 C 12 - 8 C T = 70 C 9.5 - 6.4 C Continuous Drain Current (T = 150 C) I J D b, c b, c T = 25 C A 9 - 6.4 b, c b, c T = 70 C A 7.2 - 5.1 Pulsed Drain Current (10 s Pulse Width) I 40 - 40 A DM T = 25 C 4.0 - 2.8 C Source-Drain Current Diode Current I S b, c b, c T = 25 C A 2.2 - 1.8 Pulsed Source-Drain Current I 40 - 40 SM Single Pulse Avalanche Current I 5- 5 AS L = 0.1 mH Single Pulse Avalanche Energy E 1.25 1.25 mJ AS T = 25 C 4.5 3.1 C T = 70 C 2.8 2.0 C P Maximum Power Dissipation W D b, c b, c T = 25 C A 2.5 2 b, c b, c T = 70 C A 1.6 1.28 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Unit Typ. Max. Typ. Max. b, d R Maximum Junction-to-Ambient t 10 s 40 50 52 62.5 thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 22 28 32 40 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 95 C/W (N-Channel) and 110 C/W (P-Channel). Document Number: 67441 www.vishay.com S11-0245-Rev. A, 14-Feb-11 1Si4501BDY Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J a Parameter Symbol Test Conditions Min. Typ. Max. Unit Static V = 0 V, I = 250 A N-Ch 30 GS D V Drain-Source Breakdown Voltage V DS V = 0 V, I = - 250 A P-Ch - 8 GS D I = 250 A N-Ch 34 D V Temperature Coefficient V /T DS DS J I = - 250 A P-Ch - 3 D mV/C I = 250 A N-Ch - 4.5 D V Temperature Coefficient V /T GS(th) GS(th) J I = - 250 A P-Ch 2.6 D V = V , I = 250 A N-Ch 0.8 2 DS GS D V Gate Threshold Voltage V GS(th) V = V , I = - 250 A P-Ch - 0.45 - 0.9 DS GS D V = 0 V, V = 20 V N-Ch 100 DS GS I Gate-Body Leakage nA GSS V = 0 V, V = 8 V P-Ch 100 DS GS V = 30 V, V = 0 V N-Ch 1 DS GS V = - 8 V, V = 0 V P-Ch - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C N-Ch 5 DS GS J V = - 8 V, V = 0 V, T = 55 C P-Ch - 5 DS GS J V = 5 V, V = 10 V N-Ch 20 DS GS b I A On-State Drain Current D(on) V = - 5 V, V = - 4.5 V P-Ch - 20 DS GS V = 10 V, I = 10 A N-Ch 0.0135 0.017 GS D V = - 4.5 V, I = - 6 A P-Ch 0.021 0.027 GS D b R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 7 A N-Ch 0.016 0.020 GS D V = - 2.5 V, I = - 5 A P-Ch 0.029 0.037 GS D V = 15 V, I = 10 A N-Ch 29 DS D b g S Forward Transconductance fs V = - 15 V, I = - 6 A P-Ch 24 DS D a Dynamic N-Ch 805 C Input Capacitance iss N-Channel P-Ch 1400 V = 15 V, V = 0 V, f = 1 MHz DS GS N-Ch 170 C Output Capacitance pF oss P-Ch 660 P-Channel N-Ch 80 V = - 4 V, V = 0 V, f = 1 MHz DS GS C Reverse Transfer Capacitance rss P-Ch 630 V = 15 V, V = 10 V, I = 10 A N-Ch 16.5 25 DS GS D V = - 4 V, V = - 8 V, I = - 6 A P-Ch 27.5 42 DS GS D Total Gate Charge Q g N-Ch 7.9 12 N-Channel P-Ch 16.5 25 nC V = 15 V, V = 4.5 V, I = 10 A DS GS D N-Ch 2.2 Q Gate-Source Charge gs P-Ch 2.2 P-Channel N-Ch 2.7 V = - 4 V, V = - 4.5 V, I = - -6 A DS GS D Q Gate-Drain Charge gd P-Ch 4.8 N-Ch 0.3 1.1 2.2 R Gate Resistance f = 1 MHz g P-Ch 0.9 4.2 8.4 www.vishay.com Document Number: 67441 2 S11-0245-Rev. A, 14-Feb-11