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X-On Electronics has gained recognition as a prominent supplier of SI4497DY-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4497DY-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI4497DY-T1-GE3 Vishay

SI4497DY-T1-GE3 electronic component of Vishay
SI4497DY-T1-GE3 Vishay
SI4497DY-T1-GE3 MOSFETs
SI4497DY-T1-GE3  Semiconductors

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See Product Specifications
Part No. SI4497DY-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET -30V Vds 20V Vgs SO-8
Datasheet: SI4497DY-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.947 ea
Line Total: USD 1.95 
Availability - 18960
Ship by Tue. 07 Jan to Thu. 09 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4850
Ship by Thu. 09 Jan to Wed. 15 Jan
MOQ : 2500
Multiples : 2500
2500 : USD 0.9555

3549
Ship by Thu. 16 Jan to Tue. 21 Jan
MOQ : 1
Multiples : 1
1 : USD 1.8079
10 : USD 1.5336
30 : USD 1.3815
100 : USD 1.0845
500 : USD 1.0092
1000 : USD 0.9735

18960
Ship by Tue. 07 Jan to Thu. 09 Jan
MOQ : 1
Multiples : 1
1 : USD 1.947
10 : USD 1.397
100 : USD 1.0967
250 : USD 0.9713
500 : USD 0.9471
1000 : USD 0.8701
2500 : USD 0.8558
5000 : USD 0.836

616
Ship by Tue. 07 Jan to Thu. 09 Jan
MOQ : 1
Multiples : 0
1 : USD 2.198
10 : USD 1.876
11 : USD 1.694
28 : USD 1.596
50 : USD 1.582
100 : USD 1.54

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SI4497DY-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4497DY-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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New Product Si4497DY Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 d V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.0033 at V = - 10 V - 36 TrenchFET Power MOSFET GS - 30 90 nC 100 % R Tested 0.0046 at V = - 4.5 V - 29 g GS 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Adaptor Switch High Current Load Switch SO-8 Notebook S S 1 8 D S D 2 7 G S 3 6 D G D 4 5 Top View D Ordering Information: Si4497DY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V - 30 DS V Gate-Source Voltage V 20 GS T = 25 C - 36 C T = 70 C - 29 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 24.8 A a, b T = 70 C - 19.2 A A I - 70 Pulsed Drain Current DM - 6.5 T = 25 C C I Continuous Source-Drain Diode Current S a, b T = 25 C - 2.9 A I Avalanche Current - 30 AS L = 0.1 mH Single-Pulse Avalanche Energy E 45 mJ AS T = 25 C 7.8 C T = 70 C 5.0 C Maximum Power Dissipation P W D a, b T = 25 C 3.5 A a, b T = 70 C 2.2 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, c Maximum Junction-to-Ambient t 10 s R 29 35 thJA C/W Maximum Junction-to-Foot Steady State R 13 16 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 80 C/W. d. Based on T = 25 C. C Document Number: 65748 www.vishay.com S10-0639-Rev. A, 22-Mar-10 1New Product Si4497DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 30 V DS GS D V Temperature Coefficient V /T - 26 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 5.5 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 1.0 - 2.5 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 30 V, V = 0 V, T = 55 C - 5 DS GS J a I V - 10 V, V = - 10 V - 30 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 20 A 0.0027 0.0033 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 15 A 0.0038 0.0046 GS D a g V = - 10 V, I = - 20 A 75 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 9685 iss C V = - 15 V, V = 0 V, f = 1 MHz Output Capacitance 995 pF oss DS GS C Reverse Transfer Capacitance 995 rss V = - 15 V, V = - 10 V, I = - 20 A 190 285 DS GS D Q Total Gate Charge g 90 135 nC Q V = - 15 V, V = - 4.5 V, I = - 20 A Gate-Source Charge 27.5 gs DS GS D Q Gate-Drain Charge 26.5 gd R Gate Resistance f = 1 MHz 0.5 2.3 4.6 g t Turn-On Delay Time 19 35 d(on) t V = - 15 V, R = 1.5 Rise Time 13 25 r DD L t I - 10 A, V = - 10 V, R = 1 Turn-Off DelayTime 115 200 d(off) D GEN g t Fall Time 25 50 f ns t Turn-On Delay Time 100 180 d(on) t V = - 15 V, R = 1.5 Rise Time 75 150 r DD L t I - 10 A, V = - 4.5 V, R = 1 Turn-Off DelayTime 100 180 d(off) D GEN g t Fall Time 42 80 f Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current I T = 25 C - 36 S C A Pulse Diode Forward Current I - 70 SM Body Diode Voltage V I = - 3 A, V = 0 V - 0.70 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 31 60 ns rr Body Diode Reverse Recovery Charge Q 23 45 nC rr I = - 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 13 a ns Reverse Recovery Rise Time t 18 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65748 2 S10-0639-Rev. A, 22-Mar-10

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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