New Product Si4497DY Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 d V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.0033 at V = - 10 V - 36 TrenchFET Power MOSFET GS - 30 90 nC 100 % R Tested 0.0046 at V = - 4.5 V - 29 g GS 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Adaptor Switch High Current Load Switch SO-8 Notebook S S 1 8 D S D 2 7 G S 3 6 D G D 4 5 Top View D Ordering Information: Si4497DY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V - 30 DS V Gate-Source Voltage V 20 GS T = 25 C - 36 C T = 70 C - 29 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 24.8 A a, b T = 70 C - 19.2 A A I - 70 Pulsed Drain Current DM - 6.5 T = 25 C C I Continuous Source-Drain Diode Current S a, b T = 25 C - 2.9 A I Avalanche Current - 30 AS L = 0.1 mH Single-Pulse Avalanche Energy E 45 mJ AS T = 25 C 7.8 C T = 70 C 5.0 C Maximum Power Dissipation P W D a, b T = 25 C 3.5 A a, b T = 70 C 2.2 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, c Maximum Junction-to-Ambient t 10 s R 29 35 thJA C/W Maximum Junction-to-Foot Steady State R 13 16 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 80 C/W. d. Based on T = 25 C. C Document Number: 65748 www.vishay.com S10-0639-Rev. A, 22-Mar-10 1New Product Si4497DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 30 V DS GS D V Temperature Coefficient V /T - 26 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 5.5 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 1.0 - 2.5 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 30 V, V = 0 V, T = 55 C - 5 DS GS J a I V - 10 V, V = - 10 V - 30 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 20 A 0.0027 0.0033 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 15 A 0.0038 0.0046 GS D a g V = - 10 V, I = - 20 A 75 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 9685 iss C V = - 15 V, V = 0 V, f = 1 MHz Output Capacitance 995 pF oss DS GS C Reverse Transfer Capacitance 995 rss V = - 15 V, V = - 10 V, I = - 20 A 190 285 DS GS D Q Total Gate Charge g 90 135 nC Q V = - 15 V, V = - 4.5 V, I = - 20 A Gate-Source Charge 27.5 gs DS GS D Q Gate-Drain Charge 26.5 gd R Gate Resistance f = 1 MHz 0.5 2.3 4.6 g t Turn-On Delay Time 19 35 d(on) t V = - 15 V, R = 1.5 Rise Time 13 25 r DD L t I - 10 A, V = - 10 V, R = 1 Turn-Off DelayTime 115 200 d(off) D GEN g t Fall Time 25 50 f ns t Turn-On Delay Time 100 180 d(on) t V = - 15 V, R = 1.5 Rise Time 75 150 r DD L t I - 10 A, V = - 4.5 V, R = 1 Turn-Off DelayTime 100 180 d(off) D GEN g t Fall Time 42 80 f Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current I T = 25 C - 36 S C A Pulse Diode Forward Current I - 70 SM Body Diode Voltage V I = - 3 A, V = 0 V - 0.70 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 31 60 ns rr Body Diode Reverse Recovery Charge Q 23 45 nC rr I = - 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 13 a ns Reverse Recovery Rise Time t 18 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65748 2 S10-0639-Rev. A, 22-Mar-10