Si4490DY Vishay Siliconix N-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.080 at V = 10 V 4.0 GS TrenchFET Power MOSFETs 200 0.090 at V = 6.0 V 3.8 GS Compliant to RoHS Directive 2002/95/EC D SO-8 S D 1 8 S D G 2 7 S D 3 6 G D 4 5 Top View S Ordering Information: Si4490DY-T1-E3 (Lead (Pb)-free) Si4490DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage 200 DS V V Gate-Source Voltage 20 GS T = 25 C 4.0 2.85 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 3.2 2.3 A Pulsed Drain Current I 40 A DM I Avalanch Current L = 0.1 mH 15 AS a I 2.6 1.3 Continuous Source Current (Diode Conduction) S T = 25 C 3.1 1.56 A a P W Maximum Power Dissipation D T = 70 C 2.0 1.0 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 33 40 a R Maximum Junction-to-Ambient thJA Steady State 65 80 C/W R Maximum Junction-to-Foot (Drain) Steady State 17 21 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 71341 www.vishay.com S09-0705-Rev. C, 27-Apr-09 1Si4490DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 2.0 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 160 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 160 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 10 V 40 A On-State Drain Current D(on) DS GS V = 10 V, I = 4.0 A 0.065 0.080 GS D a R Drain-Source On-State Resistance DS(on) V = 6.0 V, I = 4.0 A 0.070 0.090 GS D a g V = 15 V, I = 5 A 19 S Forward Transconductance fs DS D a V I = 2.8 A, V = 0 V 0.75 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 34 42 g Q V = 100 V, V = 10 V, I = 4.0 A Gate-Source Charge 7.5 nC gs DS GS D Gate-Drain Charge Q 12.0 gd R Gate Resistance 0.2 0.85 1.3 g Turn-On Delay Time t 14 20 d(on) t Rise Time V = 100 V, R = 25 20 30 r DD L I 4.0 A, V = 10 V, R = 6 Turn-Off Delay Time t 32 50 ns D GEN g d(off) t Fall Time 25 35 f Source-Drain Reverse Recovery Time t I = 2.8 A, dI/dt = 100 A/s 70 100 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 40 40 V = 10 V thru 6 V GS 35 32 30 25 24 20 16 15 T = 125 C C 10 5 V 8 25 C 5 4 V - 55 C 0 0 02468 10 0123456 V - Drain-to-Source Voltage (V) DS V - Gate-to-Source Voltage (V) GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71341 2 S09-0705-Rev. C, 27-Apr-09 I Dr- ain Current (A) D I - Drain Current (A) D