Si4532CDY Vishay Siliconix N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ( )I (A) Q (Typ.) DS DS(on) D g Definition 0.047 at V = 10 V 6.0 GS TrenchFET Power MOSFET N-Channel 30 2.75 0.065 at V = 4.5 V 5.2 100 % R Tested GS g 100 % UIS Tested 0.089 at V = - 10 V - 4.3 GS P-Channel - 30 4.1 Compliant to RoHS Directive 2002/95/EC 0.140 at V = - 4.5 V - 3.4 GS APPLICATIONS D S 1 2 DC/DC Converter SO-8 Load Switch S D 1 8 1 1 G 2 G D 1 2 7 1 G 1 S D 2 3 6 2 G D 2 4 5 2 Top View S D 1 2 Ordering Information: Si4532CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol N-ChannelP-ChannelUnit Drain-Source Voltage V 30 - 30 DS V V Gate-Source Voltage 20 GS T = 25 C 6.0 - 4.3 C T = 70 C 4.9 - 3.4 C Continuous Drain Current (T = 150 C) I J D b, c b, c T = 25 C A 4.9 - 3.4 b, c b, c T = 70 C A 3.9 - 2.7 Pulsed Drain Current (10 s Pulse Width) I 24 - 15 A DM T = 25 C 2.3 - 2.3 C I Source-Drain Current Diode Current S b, c b, c T = 25 C A 1.5 - 1.5 Pulsed Source-Drain Current I 24 - 12 SM I Single Pulse Avalanche Current 78 AS L = 0.1 mH Single Pulse Avalanche Energy E 2.5 3.2 mJ AS T = 25 C 2.78 2.78 C T = 70 C 1.78 1.78 C P Maximum Power Dissipation W D b, c b, c T = 25 C A 1.78 1.78 b, c b, c T = 70 C 1.14 1.14 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Unit Typ. Max. Typ. Max. b, d t 10 s R 57 70 57 70 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 37 45 37 45 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 120 C/W (N-Channel) and 110 C/W (P-Channel). Document Number: 64805 www.vishay.com S11-0652-Rev. B, 11-Apr-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si4532CDY Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J a Parameter Symbol Test Conditions Min.Typ. Max. Unit Static V = 0 V, I = 250 A N-Ch 30 GS D V Drain-Source Breakdown Voltage V DS V = 0 V, I = - 250 A P-Ch - 30 GS D I = 250 A N-Ch 33 D V Temperature Coefficient V /T DS DS J I = - 250 A P-Ch - 33 D mV/C I = 250 A N-Ch - 5.8 D V Temperature Coefficient V /T GS(th) GS(th) J II = - 250 A P-Ch 4.5 D V = V , I = 250 A N-Ch 1.0 3.0 DS GS D V Gate-Source Threshold Voltage V GS(th) V = V , I = - 250 A P-Ch - 1.0 - 3.0 DS GS D N-Ch 100 I V = 0 V, V = 20 V Gate-Body Leakage nA GSS DS GS P-Ch - 100 V = 30 V, V = 0 V N-Ch 1 DS GS V = - 30 V, V = 0 V P-Ch - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C N-Ch 5 DS GS J V = - 30 V, V = 0 V, T = 55 C P-Ch - 5 DS GS J V =5 V, V = 10 V N-Ch 20 DS GS b I A On-State Drain Current D(on) V = -5 V, V = - 10 V P-Ch - 12 DS GS V = 10 V, I = 3.5 A N-Ch 0.038 0.047 GS D V = - 10 V, I = - 3.5 A P-Ch 0.073 0.089 GS D b R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 2.8 A N-Ch 0.052 0.065 GS D V = - 4.5 V, I = - 2.5 A P-Ch 0.113 0.140 GS D V = 15 V, I = 2.5 A N-Ch 7 DS D b g S Forward Transconductance fs V = - 15 V, I = - 3.5 A P-Ch 7 DS D a Dynamic N-Ch 305 C Input Capacitance iss N-Channel P-Ch 340 V = 15 V, V = 0 V, f = 1 MHz DS GS N-Ch 65 C Output Capacitance pF oss P-Ch 67 P-Channel N-Ch 29 V = - 15 V, V = 0 V, f = 1 MHz DS GS C Reverse Transfer Capacitance rss P-Ch 51 V = 15 V, V = 10 V, I = 2.5 A N-Ch 6 9 DS GS D V = - 15 V, V = - 10 V, I = - 2.5 A P-Ch 7.8 12 DS GS D Total Gate Charge Q g N-Ch 2.75 4.5 N-Channel P-Ch 4.1 6.2 nC V = 15 V, V = 4.5 V I = 2.5 A DS GS D N-Ch 1.3 Q Gate-Source Charge gs P-Ch 1.3 P-Channel N-Ch 0.9 V = - 15 V, V = - 4.5 V, I = - 2.5 A DS GS D Q Gate-Drain Charge gd P-Ch 1.8 N-Ch 0.6 3.1 6.2 R Gate Resistance f = 1 MHz g P-Ch 2.0 10 20 www.vishay.com Document Number: 64805 2 S11-0652-Rev. B, 11-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000