Si4564DY Vishay Siliconix N- and P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) DS DS(on) I (A) g D Definition 0.0175 at V = 10 V 10 GS TrenchFET Power MOSFET N-Channel 40 9.8 0.020 at V = 4.5 V 9.2 GS 100 % R and UIS Tested g 0.021 at V = - 10 V - 9.2 Compliant to RoHS Directive 2002/95/EC GS P-Channel - 40 21.7 0.028 at V = - 4.5 V - 7.4 GS APPLICATIONS Notebook PCs D S 1 2 SO-8 S D 1 1 8 1 G D 2 7 1 1 G 2 G 1 S D 2 3 6 2 G D 2 4 5 2 Top View S D 1 2 Ordering Information: Si4564DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol N-ChannelP-ChannelUnit V Drain-Source Voltage 40 - 40 DS V Gate-Source Voltage V 16 20 GS T = 25 C 10 - 9.2 C T = 70 C 8- 7.4 C Continuous Drain Current (T = 150 C) I J D b, c b, c T = 25 C A 8.0 - 7.2 b, c b, c T = 70 C A 6.2 - 5.8 Pulsed Drain Current (10 s Pulse Width) I 40 - 40 A DM T = 25 C 2.6 - 2.6 C Source-Drain Current Diode Current I S b, c b, c T = 25 C A 1.6 - 1.6 Pulsed Source-Drain Current I 40 - 40 SM Single Pulse Avalanche Current I 10 - 20 AS L = 0.1 mH Single Pulse Avalanche Energy E 520 mJ AS T = 25 C 3.1 3.2 C T = 70 C 22.1 C P Maximum Power Dissipation W D b, c b, c T = 25 C A 2 2 b, c b, c T = 70 C A 1.28 1.28 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Unit Typ. Max. Typ. Max. b, d R Maximum Junction-to-Ambient t 10 s 50 62.5 47 62.5 thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 30 40 29 38 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 120 C/W (N-Channel) and 110 C/W (P-Channel). Document Number: 65922 www.vishay.com S10-0455-Rev. B, 22-Feb-10 1Si4564DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J a Parameter Symbol Test Conditions Min. Max. Unit Typ. Static V = 0 V, I = 250 A N-Ch 40 GS D V Drain-Source Breakdown Voltage V DS V = 0 V, I = - 250 A P-Ch - 40 GS D I = 250 A N-Ch 40 D V Temperature Coefficient V /T DS DS J I = - 250 A P-Ch - 34 D mV/C I = 250 A N-Ch - 4.1 D V Temperature Coefficient V /T GS(th) GS(th) J I = - 250 A P-Ch 5.0 D V = V , I = 250 A N-Ch 0.8 2.0 DS GS D V Gate Threshold Voltage V GS(th) V = V , I = - 250 A P-Ch - 1.2 - 2.5 DS GS D V = 0 V, V = 16 V N-Ch 100 DS GS I Gate-Body Leakage nA GSS V = 0 V, V = 20 V P-Ch 100 DS GS V = 40 V, V = 0 V N-Ch 1 DS GS V = - 40 V, V = 0 V P-Ch - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 40 V, V = 0 V, T = 55 C N-Ch 10 DS GS J V = - 40 V, V = 0 V, T = 55 C P-Ch - 10 DS GS J V = 5 V, V = 10 V N-Ch 20 DS GS b I A On-State Drain Current D(on) V = - 5 V, V = - 10 V P-Ch - 20 DS GS V = 10 V, I = 8 A N-Ch 0.0145 0.0175 GS D V = - 10 V, I = - 8 A P-Ch 0.0175 0.021 GS D b R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 5 A N-Ch 0.017 0.020 GS D V = - 4.5 V, I = - 5 A P-Ch 0.0232 0.028 GS D V = 15 V, I = 8 A N-Ch 27 DS D b g S Forward Transconductance fs V = - 15 V, I = - 8 A P-Ch 25 DS D a Dynamic N-Ch 855 C Input Capacitance iss N-Channel P-Ch 2000 V = 20 V, V = 0 V, f = 1 MHz DS GS N-Ch 120 C Output Capacitance pF oss P-Ch 240 P-Channel N-Ch 48 V = - 20 V, V = 0 V, f = 1 MHz DS GS C Reverse Transfer Capacitance rss P-Ch 202 V = 20 V, V = 10 V, I = 10 A N-Ch 20.5 31 DS GS D V = - 20 V, V = - 10 V, I = - 10 A P-Ch 41.5 63 DS GS D Total Gate Charge Q g N-Ch 9.8 15 N-Channel P-Ch 21.7 33 nC V = 20 V, V = 4.5 V, I = 10 A DS GS D N-Ch 2.6 Q Gate-Source Charge gs P-Ch 5.6 P-Channel N-Ch 2.6 V = - 20 V, V = - 4.5 V, I = - 10 A DS GS D Q Gate-Drain Charge gd P-Ch 9.8 N-Ch 0.3 1.5 3.0 R Gate Resistance f = 1 MHz g P-Ch 1.3 6.4 12.8 www.vishay.com Document Number: 65922 2 S10-0455-Rev. B, 22-Feb-10