New Product Si4599DY Vishay Siliconix N- and P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET 0.0355 at V = 10 V 6.8 GS 100 % R Tested g N-Channel 40 5.3 RoHS 0.0425 at V = 4.5 V 100 % UIS Tested 6.2 GS COMPLIANT 0.045 at V = - 10 V - 5.8 GS APPLICATIONS P-Channel - 40 11.8 0.062 at V = - 4.5 V - 5.0 GS Backlight Inverter for LCD Display Full Bridge Converter D S 1 2 SO-8 S D 1 1 8 1 G D 2 7 G 1 1 2 G 1 S D 2 3 6 2 G D 2 4 5 2 Top View S D 1 2 Ordering Information: Si4599DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol N-ChannelP-ChannelUnit V Drain-Source Voltage 40 - 40 DS V V Gate-Source Voltage 20 GS T = 25 C 6.8 - 5.8 C T = 70 C 5.4 - 4.7 C Continuous Drain Current (T = 150 C) I J D b, c b, c T = 25 C A 5.6 - 4.7 b, c b, c T = 70 C A 4.4 - 3.7 I A Pulsed Drain Current 20 - 20 DM T = 25 C 2.5 - 2.5 C Source-Drain Current Diode Current I S b, c b, c T = 25 C A 1.6 - 1.6 I Pulsed Source-Drain Current 20 - 20 SM Single Pulse Avalanche Current I 7- 10 AS L = 0 1 mH E Single Pulse Avalanche Energy 2.45 5 mJ AS T = 25 C 3.0 3.1 C T = 70 C 1.9 2 C P Maximum Power Dissipation W D b, c b, c T = 25 C 2.0 A 2.0 b, c b, c T = 70 C A 1.25 1.25 Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Typ. Max. Typ. Max. Unit b, d R t 10 s 54 64 49 62.5 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 33 42 30 40 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 120 C/W. Document Number: 68971 www.vishay.com S-82619-Rev. A, 03-Nov-08 1New Product Si4599DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J a Parameter Symbol Test Conditions Min. Typ. Max. Unit Static V = 0 V, I = 250 A N-Ch 40 GS D V Drain-Source Breakdown Voltage V DS V = 0 V, I = - 250 A P-Ch - 40 GS D I = 250 A N-Ch 44 D V Temperature Coefficient V /T DS DS J I = - 250 A P-Ch - 42 D mV/C I = 250 A N-Ch - 5.5 D V Temperature Coefficient V /T GS(th) GS(th) J II = - 250 A P-Ch 4.6 D V = V , I = 250 A N-Ch 1.4 3.0 DS GS D V Gate Threshold Voltage V GS(th) V = V , I = - 250 A P-Ch - 1.2 - 2.5 DS GS D N-Ch 100 Gate-Body Leakage I V = 0 V, V = 20 V nA GSS DS GS P-Ch - 100 V = 40 V, V = 0 V N-Ch 1 DS GS V = - 40 V, V = 0 V P-Ch - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 40 V, V = 0 V, T = 55 C N-Ch 10 DS GS J V = - 40 V, V = 0 V, T = 55 C P-Ch - 10 DS GS J V = 5 V, V = 10 V N-Ch 10 DS GS b I A On-State Drain Current D(on) V = - 5 V, V = - 10 V P-Ch - 10 DS GS V = 10 V, I = 5 A N-Ch 0.0295 0.0355 GS D V = - 10 V, I = - 5 A P-Ch 0.037 0.045 GS D b R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 4 A N-Ch 0.0355 0.0425 GS D V = - 4.5 V, I = - 4 A P-Ch 0.050 0.062 GS D V = 15 V, I = 5 A N-Ch 22 DS D b g S Forward Transconductance fs V = - 15 V, I = - 5 A P-Ch 14 DS D a Dynamic N-Ch 640 C Input Capacitance iss N-Channel P-Ch 970 V = 20 V, V = 0 V, f = 1 MHz DS GS N-Ch 73 C Output Capacitance pF oss P-Ch 120 P-Channel N-Ch 41 V = - 20 V, V = 0 V, f = 1 MHz DS GS C Reverse Transfer Capacitance rss P-Ch 95 V = 20 V, V = 10 V, I = 5 A N-Ch 11.7 20 DS GS D V = - 20 V, V = - 10 V, I = - 5 A P-Ch 25 38 DS GS D Q Total Gate Charge g N-Ch 5.3 9 N-Channel P-Ch 11.8 18 nC V = 20 V, V = 4.5 V I = 5 A DS GS D N-Ch 1.9 Q Gate-Source Charge gs P-Ch 3.0 P-Channel N-Ch 1.7 V = - 20 V, V = - 4.5 V, I = - 5 A DS GS D Q Gate-Drain Charge gd P-Ch 5.2 N-Ch 0.5 2.2 4.5 R Gate Resistance f = 1 MHz g P-Ch 1.0 5.5 11 www.vishay.com Document Number: 68971 2 S-82619-Rev. A, 03-Nov-08