Si4654DY Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Available 0.004 at V = 10 V 28.6 TrenchFET Power MOSFET GS 25 29 nC 100 % R Tested 0.0052 at V = 4.5 V g 25.6 GS 100 % UIS Tested APPLICATIONS Synchronous Buck-Low Side SO-8 - Notebook, Game Console SD Synchronous Rectifier-POL D 1 8 SD 2 7 SD 3 6 GD 4 5 G Top View S Ordering Information: Si4654DY-T1-E3 (Lead (Pb)-free) Si4654DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage 25 DS V V Gate-Source Voltage 16 GS T = 25 C 28.6 C T = 70 C 23 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 18.6 b, c T = 70 C A 14.9 A I Pulsed Drain Current 70 DM T = 25 C 5.1 C Continuous Source-Drain Diode Current I S b, c T = 25 C A 2.2 I Single Pulse Avalanche Current 30 AS L = 0.1 mH E mJ Avalanche Energy 45 AS T = 25 C 5.9 C T = 70 C 3.8 C P Maximum Power Dissipation W D b, c T = 25 C A 2.5 b, c T = 70 C A 1.6 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 10 s R 37 50 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 17 21 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 C/W. Document Number: 69813 www.vishay.com S09-0138-Rev. C, 02-Feb-09 1Si4654DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 25 V DS GS D V Temperature Coefficient V /T 26 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5.6 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.0 2.5 V GS(th) DS GS D I V = 0 V, V = 16 V Gate-Source Leakage 100 nA GSS DS GS V = 25 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 25 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 15 A 0.0032 0.004 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 10 A 0.004 0.0052 GS D a g V = 15 V, I = 15 A 100 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 3770 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 560 pF oss DS GS C Reverse Transfer Capacitance 255 rss V = 15 V, V = 10 V, I = 10 A 63 100 DS GS D Q Total Gate Charge g 29 45 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 10 A 8.5 gs DS GS D Q Gate-Drain Charge 7.2 gd R Gate Resistance f = 1 MHz 0.9 1.8 g t Turn-On Delay Time 30 50 d(on) t Rise Time V = 15 V, R = 3 10 20 r DD L I 5 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 50 90 D GEN g d(off) t Fall Time 10 20 f ns Turn-On Delay Time t 12 24 d(on) t Rise Time V = 15 V, R = 3 816 r DD L I 5 A, V = 10 V, R = 1 Turn-Off Delay Time t 38 70 D GEN g d(off) t Fall Time 816 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 5.1 S C A a I 70 Pulse Diode Forward Current SM V I = 3 A Body Diode Voltage 0.73 1.1 V SD S Body Diode Reverse Recovery Time t 32 60 ns rr Q Body Diode Reverse Recovery Charge 26 55 nC rr I = 5 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 16 a ns t Reverse Recovery Rise Time 16 b Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69813 2 S09-0138-Rev. C, 02-Feb-09