New Product Si4774DY Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.0095 at V = 10 V SkyFET Monolithic TrenchFET Gen. 16 GS 30 9.5 nC Power MOSFET and Schottky Diode 0.0120 at V = 4.5 V 15 GS 100 % R Tested g 100 % UIS Tested SO-8 Compliant to RoHS Directive 2002/95/EC SD APPLICATIONS 1 8 Notebook PC SD 2 7 - System Power, Memory Buck Converter SD 3 6 Synchronous Rectifier Switch GD 4 5 D Top Vie w Schottky Diode G Ordering Information: Si4774DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage 30 DS V V 20 Gate-Source Voltage GS T = 25 C 16 C T = 70 C 13.6 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 12 b, c T = 70 C 9.6 A A I Pulsed Drain Current (t = 300 s) 50 DM T = 25 C 4.5 C Continuous Source-Drain Diode Current I S b, c T = 25 C A 2.3 Single Pulse Avalanche Current I 15 AS L = 0.1 mH E Single Pulse Avalanche Energy 11.25 mJ AS T = 25 C 5 C T = 70 C 3.2 C P Maximum Power Dissipation W D b, c T = 25 C A 2.5 b, c T = 70 C A 1.6 Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit Maximum Junction- R t 10 s 38 50 thJA b, d to-Ambient C/W Maximum Junction- R Steady State 20 25 thJF to-Foot (Drain) Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 85 C/W. Document Number: 67953 www.vishay.com S11-1179-Rev. A, 13-Jun-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product Si4774DY Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static V V = 0, I = 1 mA Drain-Source Breakdown Voltage 30 DS GS D V V V = V , I = 1 mA Gate-Source Threshold Voltage 12.3 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 30 V, V = 0 V 0.028 0.200 DS GS I Zero Gate Voltage Drain Current mA DSS V = 30 V, V = 0 V, T = 100 C 2.5 20 DS GS J a I V 5 V, V = 10 V 30 A On -State Drain Current D(on) DS GS V = 10 V, I = 10 A 0.0079 0.0095 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 7 A 0.0096 0.0120 GS D a g V = 15 V, I = 10 A 43 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1025 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 251 pF oss DS GS C Reverse Transfer Capacitance 100 rss V = 15 V, V = 10 V, I = 10 A 20.3 30.5 DS GS D Q Total Gate Charge g 9.5 14.3 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 10 A 2.8 gs DS GS D Q Gate-Drain Charge 3.2 gd R Gate Resistance f = 1 MHz 0.3 1.0 2.0 g Turn-On Delay Time t 11 22 d(on) t Rise Time V = 15 V, R = 1.5 22 48 r DD L I 10 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 13 26 D GEN g d(off) t Fall Time 11 22 f ns Turn-On Delay Time t 816 d(on) t Rise Time V = 15 V, R = 1.5 13 26 r DD L I 10 A, V = 10 V, R = 1 Turn-Off Delay Time t 14 28 D GEN g d(off) t Fall Time 918 f Drain-Source Body Diode and Schottky Characteristics I T = 25 C Continuous Source-Drain Diode Current 4.5 S C A a I 50 Pulse Diode Forward Current SM V I = 2 A Body Diode Voltage 0.44 0.55 V SD S Body Diode Reverse Recovery Time t 18 35 ns rr Q Body Diode Reverse Recovery Charge 7.5 15 nC rr I = 5 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 10 a ns t Reverse Recovery Rise Time 8 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 67953 2 S11-1179-Rev. A, 13-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000