Si4816BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Available 0.0185 at V = 10 V 6.8 GS LITTLE FOOT Plus Power MOSFET Channel-1 7.8 0.0225 at V = 4.5 V 6.0 GS 100 % R Tested 30 g 0.0115 at V = 10 V 11.4 GS Channel-2 11.6 0.016 at V = 4.5 V 9.5 GS SCHOTTKY PRODUCT SUMMARY V (V) D 1 SD V (V) I (A) Diode Forward Voltage DS F 30 0.50 V at 1.0 A 2.0 SO-8 G 1 G D 1 8 1 1 N-Channel 1 A/S D /S 2 2 7 2 1 MOSFET S /D 1 2 A/S D /S 2 3 6 2 1 G D /S 2 4 5 2 1 Schottky Diode G 2 Top View N-Channel 2 MOSFET Ordering Information: Si4816BDY-T1-E3 (Lead (Pb)-free) Si4816BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) S A 2 ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Channel-1 Channel-2 Parameter Symbol 10 s Steady State 10 s Steady State Unit V Drain-Source Voltage 30 DS V V Gate-Source Voltage 20 GS T = 25 C 6.8 5.8 11.4 8.2 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 5.5 4.6 9.0 6.5 A I Pulsed Drain Current 30 40 A DM a I 1 0.9 2.2 1.15 Continuous Source Current (Diode Conduction) S I Single Pulse Avalanche Current 10 20 AS L = 0.1 mH E Avalanche Energy 520 mJ AS T = 25 C 1.4 1.0 2.4 1.25 A a P W Maximum Power Dissipation D T = 70 C 0.9 0.64 1.5 0.8 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Channel-1 Channel-2 Schottky Parameter Symbol Typ. Max. Typ. Max. Typ. Max. Unit t 10 s 72 90 43 53 48 60 a R Maximum Junction-to-Ambient thJA Steady State 100 125 82 100 80 100 C/W R Maximum Junction-to-Foot (Drain) Steady State 51 63 25 30 28 35 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 73026 www.vishay.com S09-0394-Rev. D, 09-Mar-09 1Si4816BDY Vishay Siliconix MOSFET SPECIFICATIONS T = 25 C, unless otherwise noted J a Typ. Parameter Symbol Test Conditions Min. Max. Unit Static Ch-1 1.0 3.0 V V = V , I = 250 A Gate Threshold Voltage V GS(th) DS GS D Ch-2 1.0 3.0 Ch-1 100 I V = 0 V, V = 20 V Gate-Body Leakage nA GSS DS GS Ch-2 100 Ch-1 1 V = 30 V, V = 0 V DS GS Ch-2 100 I Zero Gate Voltage Drain Current A DSS Ch-1 15 V = 30 V, V = 0 V, T = 85 C DS GS J Ch-2 2000 Ch-1 20 b I V = 5 V, V = 10 V A On-State Drain Current D(on) DS GS Ch-2 30 V = 10 V, I = 6.8 A Ch-1 0.0155 0.0185 GS D V = 10 V, I = 11.4 A Ch-2 0.0093 0.0115 GS D b R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 6.0 A Ch-1 0.0185 0.0225 GS D V = 4.5 V, I = 9.5 A Ch-2 0.013 0.016 GS D V = 15 V, I = 6.8 A Ch-1 30 DS D b g S Forward Transconductance fs V = 15 V, I = 11.4 A Ch-2 31 DS D I = 1 A, V = 0 V Ch-1 0.73 1.1 S GS b V V Diode Forward Voltage SD I = 1 A, V = 0 V Ch-2 0.47 0.5 S GS a Dynamic Ch-1 7.8 10 Total Gate Charge Q g Channel-1 Ch-2 11.6 18 V = 15 V, V = 5 V, I = 6.8 A DS GS D Ch-1 2.9 Gate-Source Charge Q nC gs Ch-2 4.8 Channel-2 Ch-1 2.3 V = 15 V, V = 5 V, I = - 11.4 A DS GS D Gate-Drain Charge Q gd Ch-2 3.7 Ch-1 1.5 3.0 4.5 Gate Resistance R g Ch-2 0.9 1.8 2.7 Ch-1 11 17 Turn-On Delay Time t d(on) Channel-1 Ch-2 13 20 V = 15 V, R = 15 DD L Ch-1 9 15 Rise Time t I 1 A, V = 10 V, R = 6 r D GEN g Ch-2 9 15 Ch-1 24 40 Channel-2 Turn-Off Delay Time t d(off) ns Ch-2 31 50 V = 15 V, R = 15 DD L Ch-1 9 15 I 1 A, V = 10 V, R = 6 D GEN g Fall Time t f Ch-2 11 17 I = 1.3 A, dI/dt = 100 A/s Ch-1 20 35 F t Source-Drain Reverse Recovery Time rr I = 2.2 A, dI/dt = 100 A/s Ch-2 25 40 F Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. www.vishay.com Document Number: 73026 2 S09-0394-Rev. D, 09-Mar-09