Si4567DY Vishay Siliconix N- and P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Q (Typ.) Available a g V (V) R ()I (A) DS DS(on) D TrenchFET Power MOSFET 0.060 at V = 10 V 5.0 GS 100 % R Tested N-Channel 40 5.6 g 0.070 at V = 4.5 V 4.7 GS 0.085 at V = - 10 V - 4.4 APPLICATIONS GS N-Channel - 40 6 0.122 at V = - 4.5 V - 3.7 CCFL Inverter GS D S 1 2 SO-8 S D 1 1 8 1 G D G 2 1 2 7 1 G 1 S D 2 3 6 2 G D 4 5 2 2 Top View S D 1 2 Ordering Information: Si4567DY-T1-E3 (Lead (Pb)-free) Si4567DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol N-ChannelP-ChannelUnit V Drain-Source Voltage 40 - 40 DS V Gate-Source Voltage V 16 GS T = 25 C 5- 4.4 C T = 70 C 4.7 - 3.7 C Continuous Drain Current (T = 150 C) I J D b, c b, c T = 25 C A 4.1 - 3.6 b, c b, c T = 70 C 3.3 - 2.9 A I Pulsed Drain Current (10 s Pulse Width) 20 - 20 A DM T = 25 C 2.3 - 2.5 C I Source-Drain Current Diode Current S b, c b, c T = 25 C 1.5 - 1.6 A I Pulsed Source-Drain Current 20 - 20 SM I Single Pulse Avalanche Current 712 AS L = 0.1 mH E Single Pulse Avalanche Energy 2.5 7.2 mJ AS T = 25 C 2.75 2.95 C T = 70 C 1.75 1.90 C Maximum Power Dissipation P W D b, c b, c T = 25 C A 1.85 1.95 b, c b, c T = 70 C A 1.18 1.25 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Unit Typ. Max. Typ. Max. b, d R t 10 s 57 67.5 54 64 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 35 45 33 42 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 120 C/W (N-Channel) and 110 C/W (P-Channel). Document Number: 73426 www.vishay.com S09-0393-Rev. C, 09-Mar-09 1Si4567DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J a Parameter Symbol Test Conditions Min.Typ. Max. Unit Static V = 0 V, I = 250 A N-Ch 40 GS D V Drain-Source Breakdown Voltage DS V = 0 V, I = - 250 A P-Ch - 40 GS D I = 250 A N-Ch 40 D V Temperature Coefficient V /T DS DS J I = - 250 A P-Ch - 40 D V I = 250 A N-Ch - 4.6 D V Temperature Coefficient V /T GS(th) GS(th) J II = - 250 A P-Ch 3.5 D V = V , I = 250 A N-Ch 0.8 2.2 DS GS D V Gate-Source Threshold Voltage GS(th) V = V , I = - 250 A P-Ch - 0.8 - 2.2 DS GS D N-Ch 100 Gate-Body Leakage I V = 0 V, V = 16 V nA GSS DS GS P-Ch - 100 V = 40 V, V = 0 V N-Ch 1 DS GS V = - 40 V, V = 0 V P-Ch - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 40 V, V = 0 V, T = 55 C N-Ch 10 DS GS J V = - 40 V, V = 0 V, T = 55 C P-Ch - 10 DS GS J V = 5 V, V = 10 V N-Ch 20 DS GS b I A On-State Drain Current D(on) V = - 5 V, V = - 10 V P-Ch - 20 DS GS V = 10 V, I = 4.1 A N-Ch 0.048 0.060 GS D V = - 10 V, I = - 3.6 A P-Ch 0.068 0.085 GS D b R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 3.8 A N-Ch 0.056 0.070 GS D V = - 4.5 V, I = - 2.9 A P-Ch 0.097 0.122 GS D V = 15 V, I = 4.1 A N-Ch 15 DS D b g S Forward Transconductance fs V = - 15 V, I = - 3.6 A P-Ch 7 DS D a Dynamic N-Ch 355 C Input Capacitance iss N-Channel P-Ch 480 V = 20 V, V = 0 V, f = 1 MHz DS GS N-Ch 50 C Output Capacitance pF oss P-Ch 80 P-Channel N-Ch 29 V = - 20 V, V = 0 V, f = 1 MHz DS GS C Reverse Transfer Capacitance rss P-Ch 56 V = 20 V, V = 10 V, I = 5 A N-Ch 8 12 DS GS D V = - 20 V, V = - 10 V, I = - 5 A P-Ch 12 18 DS GS D Q Total Gate Charge g N-Ch 3.7 6 N-Channel P-Ch 6 9 nC V = 20 V, V = 4.5 V I = 5 A DS GS D N-Ch 1.1 Q Gate-Source Charge gs P-Ch 1.5 P-Channel N-Ch 1.4 V = - 20 V, V = - 4.5 V, I = - 5 A DS GS D Q Gate-Drain Charge gd P-Ch 2.7 N-Ch 1.6 3.4 5.2 R Gate Resistance f = 1 MHz g P-Ch 2.8 5.7 8.6 www.vishay.com Document Number: 73426 2 S09-0393-Rev. C, 09-Mar-09