Si4563DY Vishay Siliconix N- and P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Available 0.016 at V = 10 V 8 GS TrenchFET Power MOSFET N-Channel 40 56 0.019 at V = 4.5 V 8 GS 100 % R Tested g 0.025 at V = - 10 V - 8 GS P-Channel - 40 6 APPLICATIONS 0.032 at V = - 4.5 V - 7.5 GS CCFL Inverter D S 1 2 SO-8 S D 1 8 1 1 G G D 2 1 2 7 1 G 1 S D 2 3 6 2 G D 2 4 5 2 Top View S D 1 2 Ordering Information: Si4563DY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET P-Channel MOSFET Si4563DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol N-ChannelP-ChannelUnit V Drain-Source Voltage 40 - 40 DS V Gate-Source Voltage V 16 GS T = 25 C 8- 8 C T = 70 C 8- 6.5 C Continuous Drain Current (T = 150 C) I J D b, c b, c T = 25 C A 8 - 6.6 b, c b, c T = 70 C 6.5 - 5.2 A I Pulsed Drain Current (10 s Pulse Width) 20 - 20 A DM T = 25 C 2.7 - 2.7 C I Source-Drain Current Diode Current S b, c b, c T = 25 C 1.6 - 1.6 A I Pulsed Source-Drain Current 20 - 20 SM I Single Pulse Avalanche Current 20 25 AS L = 0 1 mH E Single Pulse Avalanche Energy 20 31.2 mJ AS T = 25 C 3.25 3.25 C T = 70 C 2.10 2.10 C Maximum Power Dissipation P W D b, c b, c T = 25 C A 2.0 2.0 b, c b, c T = 70 C A 1.25 1.25 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Unit Typ. Max. Typ. Max. b, d R t 10 s 45 62.5 45 62.5 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 29 38 29 38 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 120 C/W. Document Number: 73513 www.vishay.com S09-0393-Rev. C, 09-Mar-09 1Si4563DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J a Parameter Symbol Test Conditions Min.Typ. Max. Unit Static V = 0 V, I = 250 A N-Ch 40 GS D V Drain-Source Breakdown Voltage V DS V = 0 V, I = - 250 A P-Ch - 40 GS D I = 250 A N-Ch 40 D V Temperature Coefficient V /T DS DS J I = - 250 A P-Ch - 40 D mV/C I = 250 A N-Ch - 4.8 D V Temperature Coefficient V /T GS(th) GS(th) J II = - 250 A P-Ch 4.0 D V = V , I = 250 A N-Ch 0.8 2.0 DS GS D V Gate Threshold Voltage V GS(th) V = V , I = - 250 A P-Ch - 0.8 - 2.2 DS GS D N-Ch 100 Gate-Body Leakage I V = 0 V, V = 16 V nA GSS DS GS P-Ch - 100 V = 40 V, V = 0 V N-Ch 1 DS GS V = - 40 V, V = 0 V P-Ch - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 40 V, V = 0 V, T = 55 C N-Ch 10 DS GS J V = - 40 V, V = 0 V, T = 55 C P-Ch - 10 DS GS J V = 5 V, V = 10 V N-Ch 20 DS GS b I A On-State Drain Current D(on) V = - 5 V, V = - 10 V P-Ch - 20 DS GS V = 10 V, I = 5 A N-Ch 0.013 0.016 GS D V = - 10 V, I = - 5 A P-Ch 0.020 0.025 GS D b R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 4 A N-Ch 0.015 0.019 GS D V = - 4.5 V, I = - 4 A P-Ch 0.025 0.032 GS D V = 15 V, I = 5 A N-Ch 23 DS D b g S Forward Transconductance fs V = - 15 V, I = - 5 A P-Ch 18 DS D a Dynamic N-Ch 2390 C Input Capacitance iss N-Channel P-Ch 2120 V = 20 V, V = 0 V, f = 1 MHz DS GS N-Ch 270 C Output Capacitance pF oss P-Ch 310 P-Channel N-Ch 165 V = - 20 V, V = 0 V, f = 1 MHz DS GS C Reverse Transfer Capacitance rss P-Ch 235 V = 20 V, V = 10 V, I = 5 A N-Ch 56 85 DS GS D V = - 20 V, V = - 10 V, I = - 5 A P-Ch 52 80 DS GS D Q Total Gate Charge g N-Ch 26 40 N-Channel P-Ch 25.5 39 nC V = 20 V, V = 4.5 V I = 5 A DS GS D N-Ch 5.5 Q Gate-Source Charge gs P-Ch 5.1 P-Channel N-Ch 9.7 V = - 20 V, V = - 4.5 V, I = - 5 A DS GS D Q Gate-Drain Charge gd P-Ch 11.7 N-Ch 2.6 4.0 R Gate Resistance f = 1 MHz g P-Ch 5.8 9.0 www.vishay.com Document Number: 73513 2 S09-0393-Rev. C, 09-Mar-09
