Si4618DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) DS DS(on) I (A) g D Definition 0.017 at V = 10 V 8.0 GS TrenchFET Power MOSFET Channel-1 30 12.5 0.0195 at V = 4.5 V 7.5 100 % R and UIS Tested GS g 0.010 at V = 10 V 15.2 Compliant to RoHS Directive 2002/95/EC GS Channel-2 30 17 0.0115 at V = 4.5 V 14.1 GS APPLICATIONS SCHOTTKY PRODUCT SUMMARY Notebook Logic dc-to-dc Low Current dc-to-dc V (V) SD D 1 a V (V) I (A) DS Diode Forward Voltage F 30 0.43 V at 1.0 A 3.8 SO-8 G 1 G D 1 1 8 1 N-Channel 1 MOSFET S S /D S /D 2 2 7 1 2 1 2 S S /D 2 3 6 1 2 S /D G Schottky Diode 2 4 5 1 2 G 2 T op V i e w N-Channel 2 MOSFET Ordering Information: Si4618DY-T1-E3 (Lead (Pb)-free) S Si4618DY-T1-GE3 (Lead (Pb)-free and Halogen-free) 2 ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Channel-1Channel-2Unit V Drain-Source Voltage 30 30 DS V Gate-Source Voltage V 16 16 GS T = 25 C 8.0 15.2 C = 70 C T 6.4 12.1 C Continuous Drain Current (T = 150 C) I J D b, c b, c T = 25 C A 6.7 11.4 b, c b, c T = 70 C A 5.4 9.1 Pulsed Drain Current (10 s Pulse Width) I 35 60 A DM T = 25 C 1.8 3.8 C I Source-Drain Current Diode Current S b, c b, c T = 25 C A 1.25 2.4 Pulsed Source-Drain Current I 35 35 SM Single Pulse Avalanche Current I 15 15 AS L = 0.1 mH Single Pulse Avalanche Energy E 11.2 11.2 mJ AS T = 25 C 1.98 4.16 C T = 70 C 1.26 2.66 C P Maximum Power Dissipation W D b, c b, c T = 25 C A 1.38 2.35 b, c b, c T = 70 C A 0.88 1.5 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Channel-1 Channel-2 Parameter Symbol Unit Typ. Max. Typ. Max. b, d t 10 s R 72 90 43 53 thJA Maximum Junction-to-Ambient C/W R Maximum Junction-to-Foot (Drain) Steady State 51 63 25 30 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 125 C/W (Channel-1) and 100 C/W (Channel-2). Document Number: 74450 www.vishay.com S09-2109-Rev. B, 12-Oct-09 1Si4618DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J a Parameter Symbol Test Conditions Typ. Unit Min. Max. Static V = 0 V, I = 1 mA Ch-1 30 V GS D V Drain-Source Breakdown Voltage DS V = 0 V, I = 1 mA Ch-2 30 GS D V Temperature Coefficient V /T I = 250 A Ch-1 35 DS DS J D V Temperature Coefficient V /T I = 250 A Ch-1 - 6 GS(th) GS(th) J D V = V , I = 1 mA Ch-1 1 2.5 DS GS D V Gate Threshold Voltage GS(th) V = V , I = 1 mA Ch-2 1 2.5 DS GS D V = 0 V, V = 16 V Ch-1 100 DS GS I Gate-Body Leakage A GSS V = 0 V, V = 16 V Ch-2 100 DS GS V = 30 V, V = 0 V Ch-1 0.001 DS GS V = 30 V, V = 0 V Ch-2 0.05 0.5 DS GS Zero Gate Voltage Drain Current I mA DSS V = 30 V, V = 0 V, T = 100 C Ch-1 0.025 DS GS J V = 30 V, V = 0 V, T = 100 C Ch-2 3 15 DS GS J V = 5 V, V = 10 V Ch-1 20 DS GS b I A On-State Drain Current D(on) V = 5 V, V = 10 V Ch-2 20 DS GS V = 10 V, I = 8 A Ch-1 0.014 0.017 GS D V = 10 V, I = 8 A Ch-2 0.0083 0.010 GS D b R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 5 A Ch-1 0.016 0.0195 GS D V = 4.5 V, I = 5 A Ch-2 0.0095 0.0115 GS D V = 15 V, I = 8 A Ch-1 40 DS D b g S Forward Transconductance fs V = 15 V, I = 8 A Ch-2 47 DS D a Dynamic Ch-1 1535 C Input Capacitance iss Channel-1 Ch-2 2290 V = 15 V, V = 0 V, f = 1 MHz DS GS Ch-1 205 C Output Capacitance pF oss Ch-2 360 Channel-2 Ch-1 91 V = 15 V, V = 0 V, f = 1 MHz DS GS C Reverse Transfer Capacitance rss Ch-2 117 V = 15 V, V = 10 V, I = 8 A Ch-1 29 44 DS GS D V = 15 V, V = 10 V, I = 8 A Ch-2 39 59 DS GS D Q Total Gate Charge g Ch-1 12.5 19 Channel-1 Ch-2 17 26 nC V = 15 V, V = 4.5 V, I = 8 A DS GS D Ch-1 4.1 Q Gate-Source Charge gs Ch-2 5.6 Channel-2 Ch-1 3.4 V = 15 V, V = 4.5 V, I = 8 A DS GS D Q Gate-Drain Charge gd Ch-2 4 Ch-1 1.8 3.0 R Gate Resistance f = 1 MHz g Ch-2 1.9 3.0 www.vishay.com Document Number: 74450 2 S09-2109-Rev. B, 12-Oct-09