Si4850EY Vishay Siliconix N-Channel Reduced Q , Fast Switching MOSFET g FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.022 at V = 10 V 8.5 GS TrenchFET Power MOSFETs 60 0.031 at V = 4.5 V 7.2 175 C Maximum Junction Temperature GS Compliant to RoHS Directive 2002/95/EC D SO-8 SD 1 8 SD 2 7 SD G 3 6 GD 4 5 Top View S Ordering Information: Si4850EY-T1-E3 (Lead (Pb)-free) Si4850EY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V 60 Drain-Source Voltage DS V Gate-Source Voltage V 20 GS T = 25 C 8.5 6.0 A a I Continuous Drain Current (T = 175 C) D J T = 70 C 7.1 5.0 A A Pulsed Drain Current I 40 DM Avalanche Current I 15 AS E 11 mJ Single Pulse Avalanche Energy AS T = 25 C 3.3 1.7 A a P W Maximum Power Dissipation D T = 70 C 2.3 1.2 A T , T - 55 to 175 C Operating Junction and Storage Temperature Range J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 36 45 a R Maximum Junction-to-Ambient thJA Steady State 75 90 C/W Steady State R 17 20 Maximum Junction-to-Foot (Drain) thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 71146 www.vishay.com S09-1341-Rev. F, 13-Jul-09 1Si4850EY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 60 DS GS D V V V = V , I = 250 A Gate Threshold Voltage 13 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 60 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 60 V, V = 0 V, T = 55 C 20 DS GS J a I V 5 V, V = 10 V 40 A On-State Drain Current D(on) DS GS V = 10 V, I = 6.0 A 0.018 0.022 GS D V = 10 V, I = 6.0 A, T = 125 C 0.031 0.037 GS D J a R Drain-Source On-State Resistance DS(on) V = 10 V, I = 6.0 A, T = 175 C 0.039 0.047 GS D J V = 4.5 V, I = 5.1 A 0.025 0.031 GS D a g V = 15 V, I = 6.0 A 25 S Forward Transconductance fs DS D a V I = 1.7 A, V = 0 V 0.8 1.2 V Diode Forward Voltage SD S GS b Dynamic Q Total Gate Charge 18 27 g Q V = 30 V, V = 10 V, I = 6.0 A 3.4 nC Gate-Source Charge gs DS GS D Q Gate-Drain Charge 5.3 gd R V = 0.1 V, f = 5 MHz 0.5 1.4 2.4 Gate Resistance g GS t Turn-On Delay Time 10 20 d(on) t V = 30 V, R = 30 10 20 Rise Time r DD L 1 A, V = 10 V, R = 6 t I Turn-Off Delay Time D GEN g 25 50 ns d(off) t Fall Time 12 24 f t I = 1.7 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 50 80 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 40 40 V = 10 V thru 5 V GS 32 32 24 24 4 V 16 16 T = 150 C C 8 8 25 C 3 V - 55 C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 234 5 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71146 2 S09-1341-Rev. F, 13-Jul-09 I - Drain Current (A) D I - Drain Current (A) D