Si4866BDY Vishay Siliconix N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Available 0.0053 at V = 4.5 V 21.5 GS TrenchFET Power MOSFET 0.006 at V = 2.5 V 12 20.2 29.5 nC GS 100 % R and UIS Tested g 0.0074 at V = 1.8 V 18.2 GS APPLICATIONS Synchronous Rectifier Point-of-Load Synchronous Buck Converter SO-8 D S D 1 8 S 2 7 D S D 3 6 G 4 5 D G Top View S Ordering Information: Si4866BDY-T1-E3 (Lead (Pb)-free) Si4866BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit 12 Drain-Source Voltage V DS V 8 Gate-Source Voltage V GS 21.5 T = 25 C C 17.2 T = 70 C C Continuous Drain Current (T = 150 C) I J D b,c T = 25 C 16.1 A b,c T = 70 C 12.9 A A Pulsed Drain Current I 50 DM T = 25 C 4.0 C I Continuous Source-Drain Diode Current S b,c T = 25 C 2.3 A Single Pulse Avalanche Current I 20 AS L = 0.1 mH 20 Avalanche Energy E mJ AS 4.45 T = 25 C C 2.85 T = 70 C C P Maximum Power Dissipation W D b,c T = 25 C 2.50 A b,c T = 70 C 1.6 A T , T - 55 to 150 Operating Junction and Storage Temperature Range C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b,d R t 10 s 40 50 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 23 28 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 90 C/W. Document Number: 70341 www.vishay.com S09-0540-Rev. B, 06-Apr-09 1Si4866BDY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 12 V DS GS D V Temperature Coefficient V /T 12 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 3.5 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 0.4 1.0 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 nA GSS DS GS V = 12 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 12 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 4.5 V 20 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 12 A 0.0042 0.0053 GS D a R V = 2.5 V, I = 10 A 0.0048 0.0060 Drain-Source On-State Resistance DS(on) GS D V = 1.8 V, I = 8 A 0.006 0.0074 GS D a g V = 15 V, I = 12 A 80 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 5020 iss C V = 6 V, V = 0 V, f = 1 MHz Output Capacitance 1305 pF oss DS GS C Reverse Transfer Capacitance 805 rss V = 6 V, V = 4.5 V, I = 10 A 52 80 DS GS D Q Total Gate Charge g 29.5 45 nC Q Gate-Source Charge V = 6 V, V = 2.5 V, I = 10 A 6.2 gs DS GS D Q Gate-Drain Charge 8.9 gd R Gate Resistance f = 1 MHz 0.8 1.3 g t Turn-On Delay Time 26 40 d(on) t Rise Time V = 6 V, R = 1.2 18 30 r DD L I 5 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 85 130 D GEN g d(off) t Fall Time 32 50 f ns Turn-On Delay Time t 13 25 d(on) t Rise Time V = 6 V, R = 1.2 12 24 r DD L I 5 A, V = 10 V, R = 1 Turn-Off Delay Time t 57 90 D GEN g d(off) t Fall Time 918 f Drain-Source Body Diode Characteristics T = 25 C Continuous Source-Drain Diode Current I 4 S C A a I 50 Pulse Diode Forward Current SM V I = 2.3 A Body Diode Voltage 0.62 1.1 V SD S Body Diode Reverse Recovery Time t 50 80 ns rr Q Body Diode Reverse Recovery Charge 35 55 nC rr I = 9.5 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 19 a ns t Reverse Recovery Rise Time 31 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 70341 2 S09-0540-Rev. B, 06-Apr-09