Si4890BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Available 0.012 at V = 10 V 16 TrenchFET Power MOSFET GS 30 10 nC 100 % R and UIS Tested 0.016 at V = 4.5 V g 14 GS APPLICATIONS Notebook - System Power - Adapter Switch SO-8 DC/DC D SD 1 8 SD 2 7 SD 3 6 GD 4 5 G Top View S Ordering Information: Si4890BDY-T1-E3 (Lead (Pb)-free) Si4890BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage 30 DS V V Gate-Source Voltage 25 GS T = 25 C 16 C T = 70 C 12.9 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 10.7 b, c T = 70 C A 8.6 A I Pulsed Drain Current 60 DM T = 25 C 5.1 C Continuous Source-Drain Diode Current I S b, c T = 25 C A 2.2 I Single Pulse Avalanche Current 20 AS L = 0.1 mH E mJ Avalanche Energy 20 AS T = 25 C 5.7 C T = 70 C 3.6 C P Maximum Power Dissipation W D b, c T = 25 C A 2.5 b, c T = 70 C A 1.6 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 10 s R 40 50 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 18 22 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 90 C/W. Document Number: 69502 www.vishay.com S09-0540-Rev. B, 06-Apr-09 1New Product Si4890BDY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T 36 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 6.2 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.4 2.6 V GS(th) DS GS D I V = 0 V, V = 25 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 10 A 0.009 0.012 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 8 A 0.012 0.016 GS D a g V = 15 V, I = 10 A 30 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 1535 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 255 pF oss DS GS C Reverse Transfer Capacitance 106 rss V = 15 V, V = 10 V, I = 10 A 22 33 DS GS D Q Total Gate Charge g 10 15 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 10 A 4.3 gs DS GS D Q Gate-Drain Charge 2.6 gd R Gate Resistance f = 1 MHz 0.77 1.5 g t Turn-On Delay Time 20 40 d(on) t Rise Time V = 15 V, R = 1.5 10 20 r DD L I 5 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 20 40 D GEN g d(off) t Fall Time 8 16 f ns Turn-On Delay Time t 11 22 d(on) t Rise Time V = 15 V, R = 1.5 8 16 r DD L I 5 A, V = 10 V, R = 1 Turn-Off Delay Time t 20 40 D GEN g d(off) t Fall Time 8 16 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 5.1 S C A a I 60 Pulse Diode Forward Current SM V I = 3 A Body Diode Voltage 0.76 1.1 V SD S Body Diode Reverse Recovery Time t 24 40 ns rr Q Body Diode Reverse Recovery Charge 18 30 nC rr I = 5 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 14 a ns t Reverse Recovery Rise Time 10 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69502 2 S09-0540-Rev. B, 06-Apr-09