Si4904DY Vishay Siliconix Dual N-Channel 40-V MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Available 0.016 at V = 10 V 8 GS TrenchFET Power MOSFET 40 56 100 % R Tested 0.019 at V = 4.5 V 8 GS g UIS Tested APPLICATIONS CCFL Inverter SO-8 D D 1 2 S D 1 1 8 1 G D 2 7 1 1 S D 2 3 6 2 G G 1 2 G D 2 4 5 2 Top View S S 1 2 Ordering Information: Si4904DY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET N-Channel MOSFET Si4904DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 40 DS V Gate-Source Voltage V 16 GS T = 25 C 8 C T = 70 C 8 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 8 b, c T = 70 C A 6.5 Pulsed Drain Current (10 s Pulse Width) I 20 DM A T = 25 C 2.7 C I Source-Drain Current Diode Current S b, c = 25 C T A 1.6 Pulsed Source-Drain Current I 20 SM Single Pulse Avalanche Current I 20 AS L = 0.1 mH Single Pulse Avalanche Energy E 20 AS T = 25 C 3.25 C T = 70 C 2.10 C P Maximum Power Dissipation W D b, c T = 25 C A 2.0 b, c T = 70 C A 1.25 Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit b, d R t 10 s 45 62.5 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) Steady-State R 29 38 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 120 C/W. Document Number: 73793 www.vishay.com S09-0540-Rev. C, 06-Apr-09 1Si4904DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 40 V DS GS D V Temperature Coefficient V /T I = 250 A 40 DS DS J D mV/C V Temperature Coefficient V /T I = 250 A - 4.8 GS(th) GS(th) J D V V = V , I = 250 A Gate Threshold Voltage 0.8 2.0 V GS(th) DS GS D I V = 0 V, V = 16 V Gate-Body Leakage 100 nA GSS DS GS V = 40 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 40 V, V = 0 V, T = 55 C 10 DS GS J b I V = 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 5 A 0.013 0.016 GS D b R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 4 A 0.015 0.019 GS D b g V = 15 V, I = 5 A 23 S Forward Transconductance fs DS D a Dynamic C Input Capacitance 2390 iss N-Channel Output Capacitance C 270 pF oss V = 20 V, V = 0 V, I = 1 MHz DS GS D C Reverse Transfer Capacitance 165 rss V = 20 V, V = 10 V, I = 5 A 56 85 DS GS D Q Total Gate Charge g 26 40 N-Channel Q Gate-Source Charge 5.5 nC gs V = 20 V, V = 4.5 V, I = 5 A DS GS D Q Gate-Drain Charge 9.7 gd R Gate Resistance f = 1 MHz 2.6 4.0 g t Turn-On Delay Time 15 23 d(on) N-Channel t Rise Time 20 30 r V = 20 V, R = 4 DD L t Turn-Off Delay Time 56 85 d(off) I 5 A, V = 4.5 V, R = 1 D GEN g Fall Time t 10 15 f ns t Turn-On Delay Time 88 135 d(on) N-Channel Rise Time t 117 180 r V = 20 V, R =4 DD L t Turn-Off Delay Time 62 95 d(off) I 5 A, V = 4.5 V, R = 1 D GEN g Fall Time t 19 30 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 2.7 S C A a I 20 Pulse Diode Forward Current SM Body Diode Voltage V I = 1.5 A 0.69 1.2 V SD S t Body Diode Reverse Recovery Time 62 95 ns rr Body Diode Reverse Recovery Charge Q 62 95 nC N-Channel rr I = 2 A, dI/dt = 100 A/s, T = 25 C t F J Reverse Recovery Fall Time 26 a nS Reverse Recovery Rise Time t 36 b Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73793 2 S09-0540-Rev. C, 06-Apr-09