X-On Electronics has gained recognition as a prominent supplier of SI4916DY-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4916DY-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI4916DY-T1-GE3 Vishay

SI4916DY-T1-GE3 electronic component of Vishay
SI4916DY-T1-GE3 Vishay
SI4916DY-T1-GE3 MOSFETs
SI4916DY-T1-GE3  Semiconductors

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Part No. SI4916DY-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V 1010.5A 18mohm 10V
Datasheet: SI4916DY-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.4985 ea
Line Total: USD 1246.25 
Availability - 0
MOQ: 2500  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 08 Jan to Tue. 14 Jan
MOQ : 2500
Multiples : 1
2500 : USD 0.4985

   
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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We are delighted to provide the SI4916DY-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4916DY-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si4916DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Available 0.018 at V = 10 V 10 GS LITTLE FOOT Plus Integrated Schottky Channel-1 6.6 0.023 at V = 4.5 V 8.5 GS 100 % R Tested g 30 0.018 at V = 10 V 10.5 GS Channel-2 8.9 APPLICATIONS 0.022 at V = 4.5 V 9.3 GS DC/DC Converters - Notebook SCHOTTKY PRODUCT SUMMARY V (V) SD D 1 V (V) I (A) Diode Forward Voltage DS F 30 0.50 V at 1.0 A 2.0 SO-8 G 1 D G 1 1 8 1 N-Channel 1 MOSFET D S /D 2 7 S /D 1 1 2 1 2 G S /D 2 3 6 1 2 S S /D 2 4 5 1 2 Schottky Diode G 2 T op V i e w N-Channel 2 MOSFET Ordering Information: Si4916DY-T1-E3 (Lead (Pb)-free) S 2 Si4916DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Channel-1Channel-2Unit V Drain-Source Voltage 30 DS V V Gate-Source Voltage 20 GS T = 25 C 10 10.5 C T = 70 C 88.3 C a, b I Continuous Drain Current (T = 150 C) D J a, b, c a, b, c T = 25 C 7.8 A 7.5 a ,b, c a, b, c T = 70 C A 6 6.3 Pulsed Drain Current (10 s Pulse Width) I 40 40 A DM T = 25 C 33.2 C I Continuous Source-Drain Diode Current S a, b, c a, b, c T = 25 C A 1.7 1.8 PulseD Source-Drain Current I 40 40 SM I Single-Pulse Avalanche Current 15 AS L = 0.1 mH Single-Pulse Avalanche Energy E 11.2 mJ AS T = 25 C 3.3 3.5 C T = 70 C 2.1 2.2 C a, b P W Maximum Power Dissipation D a, b, c a, b, c T = 25 C A 1.9 2.0 a, b, c a, b, c T = 70 C A 1.2 1.3 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. Document Number: 74331 www.vishay.com S09-0540-Rev. B, 06-Apr-09 1Si4916DY Vishay Siliconix THERMAL RESISTANCE RATINGS Channel-1 Channel-2 Symbol Parameter Typ. Max. Typ. Max. Unit a t 10 s R 54 65 47 60 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 32 38 30 35 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. b. Maximum under Steady State conditions is 112 C/W for Channel 1 and 107 C/W for Channel 2. MOSFET SPECIFICATIONS T = 25 C, unless otherwise noted J a Parameter Symbol Test Conditions Min.Typ. Max. Unit Static Ch-1 30 Drain-Source Breakdown Voltage V V = 0 V, I = 250 A V DS GS D Ch-2 30 Ch-1 24 V Temperature Coefficient V /T mV/C DS DS J Ch-2 25 I = 250 A D Ch-1 - 6 V Temperature Coefficient V /T GS(th) GS(th) J Ch-2 - 6 V Ch-1 1.5 3.0 Gate Threshold Voltage V V = V , I = 250 A GS(th) DS GS D Ch-2 1.5 2.7 Ch-1 100 Gate-Body Leakage I V = 0 V, V = 20 V nA GSS DS GS Ch-2 100 Ch-1 1 V = 30 V, V = 0 V DS GS Ch-2 100 Zero Gate Voltage Drain Current I A DSS Ch-1 15 V = 30 V, V = 0 V, T = 85 C DS GS J Ch-2 2000 Ch-1 20 b I V = 5 V, V = 10 V A On-State Drain Current D(on) DS GS Ch-2 20 V = 10 V, I = 10 A Ch-1 0.0145 0.018 GS D V = 10 V, I = 10.5 A Ch-2 0.015 0.018 GS D b R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 8.5 A Ch-1 0.019 0.023 GS D V = 4.5 V, I = 9.3 A Ch-2 0.018 0.022 GS D V = 15 V, I = 10 A Ch-1 30 DS D b g S Forward Transconductance fs V = 15 V, I = 10.5 A Ch-2 35 DS D I = 1.7 A, V = 0 V Ch-1 0.75 1.1 S GS b V V Diode Forward Voltage SD I = 1 A, V = 0 V Ch-2 0.47 0.5 S GS a Dynamic Ch-1 6.6 10 Q Total Gate Charge g Channel-1 Ch-2 8.9 14 V = 15 V, V = 4.5 V, I = 10 A DS GS D Ch-1 2.9 Q Gate-Source Charge nC gs Ch-2 3.4 Channel-2 Ch-1 2.3 V = 15 V, V = 4.5 V, I = - 10.5 A DS GS D Q Gate-Drain Charge gd Ch-2 2.4 Ch-1 0.5 1.9 2.9 R Gate Resistance g Ch-2 0.5 2.3 3.5 www.vishay.com Document Number: 74331 2 S09-0540-Rev. B, 06-Apr-09

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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