Si4931DY Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.018 at V = - 4.5 V - 8.9 GS TrenchFET Power MOSFET - 12 0.022 at V = - 2.5 V - 8.1 GS Advanced High Cell Density Process 0.028 at V = - 1.8 V - 3.6 GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switching S S 1 2 SO-8 S D 1 1 8 1 G G 1 2 G D 2 7 1 1 S D 2 3 6 2 G D 2 4 5 2 Top View D D 1 2 Ordering Information: Si4931DY-T1-E3 (Lead (Pb)-free) Si4931DY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 sSteady State Unit V Drain-Source Voltage - 12 DS V Gate-Source Voltage V 8 GS T = 25 C - 8.9 - 6.7 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 7.1 - 5.4 A A I Pulsed Drain Current - 30 DM a I - 1.7 - 0.9 Continuous Source Current (Diode Conduction) S T = 25 C 2.0 1.1 A a P W Maximum Power Dissipation D T = 70 C 1.3 0.7 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 46 62.5 a R Maximum Junction-to-Ambient thJA Steady State 80 110 C/W Maximum Junction-to-Foot (Drain) Steady State R 24 32 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 72379 www.vishay.com S09-0704-Rev. C, 27-Apr-09 1Si4931DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = - 350 A Gate Threshold Voltage - 0.4 - 1.0 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Body Leakage 100 nA GSS DS GS V = - 12 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 12 V, V = 0 V, T = 55 C - 5 DS GS J a I V = - 5 V, V = - 4.5 V - 30 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 8.9 A 0.0145 0.018 GS D a R V = - 2.5 V, I = - 8.1 A 0.018 0.022 Drain-Source On-State Resistance DS(on) GS D V = - 1.8 V, I = - 3.6 A 0.023 0.028 GS D a g V = - 6 V, I = - 8.9 A 26 S Forward Transconductance fs DS D a V I = - 1.7 A, V = 0 V - 0.7 - 1.2 V Diode Forward Voltage SD S GS b Dynamic Q Total Gate Charge 34.5 52 g Gate-Source Charge Q V = - 6 V, V = - 4.5 V, I = - 8.9 A 5.1 nC gs DS GS D Q Gate-Drain Charge 9.6 gd Gate Resistance R 9 g t Turn-On Delay Time 25 40 d(on) Rise Time t 46 70 V = - 6 V, R = 6 r DD L I - 1 A, V = - 4.5 V, R = 6 t Turn-Off Delay Time D GEN g 230 345 ns d(off) Fall Time t 155 235 f t I = - 1.7 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 128 200 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C unless otherwise noted 30 30 V = 5 V thru 2 V GS 24 24 18 18 12 12 1.5 V T = 125 C C 6 6 25 C - 55 C 1 V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0 1234 5 V - Gate-to-Source Voltage (V) GS V - Drain-to-Source Voltage (V) DS Transfer Characteristics Output Characteristics www.vishay.com Document Number: 72379 2 S09-0704-Rev. C, 27-Apr-09 I - Drain Current (A) D I - Drain Current (A) D