Si4908DY Vishay Siliconix Dual N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Available 0.060 at V = 10 V 5.0 TrenchFET Power MOSFET GS 40 5.6 100 % R Tested 0.070 at V = 4.5 V g 4.7 GS APPLICATIONS CCFL Inverter D D 1 2 SO-8 S D 1 1 8 1 G D 1 2 7 1 S D 2 3 6 2 G G 1 2 G D 2 4 5 2 Top View S S 1 2 Ordering Information: Si4908DY-T1-E3 (Lead (Pb)-free) Si4908DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 40 DS V Gate-Source Voltage V 16 GS T = 25 C 5 C T = 70 C 4.7 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 4.1 b, c T = 70 C 3.3 A Pulsed Drain Current (10 s Pulse Width) I 20 DM A T = 25 C 2.3 C I Source-Drain Current Diode Current S b, c = 25 C T 1.5 A Pulsed Source-Drain Current I 20 SM Single Pulse Avalanche Current I 7 AS L = 0.1 mH Single Pulse Avalanche Energy E 2.5 AS T = 25 C 2.75 C T = 70 C 1.75 C P Maximum Power Dissipation W D b, c T = 25 C 1.85 A b, c T = 70 C A 1.18 Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typ.Max.Unit b, d R t 10 s 57 67.5 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) Steady-State R 35 45 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 120 C/W. Document Number: 73698 www.vishay.com S09-0540-Rev. B, 06-Apr-09 1Si4908DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J a Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 40 V DS GS D V Temperature Coefficient V /T 40 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 4.6 GS(th) GS(th) J V V = V , I = 250 A Gate Threshold Voltage 0.8 2.2 V GS(th) DS GS D I V = 0 V, V = 16 V Gate-Body Leakage 100 nA GSS DS GS V = 40 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 40 V, V = 0 V, T = 55 C 10 DS GS J b I V = 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 4.1 A 0.048 0.060 GS D b R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 3.8 A 0.056 0.070 GS D b g V = 15 V, I = 4.1 A 15 S Forward Transconductance fs DS D a Dynamic C Input Capacitance 355 iss Output Capacitance C V = 20 V, V = 0 V, I = 1 MHz 50 pF oss DS GS D C Reverse Transfer Capacitance 29 rss V = 20 V, V = 10 V, I = 5 A 812 DS GS D Total Gate Charge Q g 3.7 6 nC Q Gate-Source Charge V = 20 V, V = 4.5 V, I = 5 A 1.1 gs DS GS D Gate-Drain Charge Q 1.4 gd R Gate Resistance f = 1 MHz 3.4 5.2 g t Turn-On Delay Time 813 d(on) t Rise Time V = 20 V, R = 4 20 30 r DD L I 1 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 23 35 d(off) t Fall Time 27 42 f ns t Turn-On Delay Time 74 110 d(on) Rise Time t 95 145 V = 20 V, R =4 r DD L I 1 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 31 48 d(off) Fall Time t 33 50 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 2.3 S C A a I 20 Pulse Diode Forward Current SM V I = 1.5 A Body Diode Voltage 0.8 1.2 V SD S t Body Diode Reverse Recovery Time 26 40 ns rr Body Diode Reverse Recovery Charge Q 26 40 nC rr I = 2 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 13 a ns Reverse Recovery Rise Time t 13 b Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73698 2 S09-0540-Rev. B, 06-Apr-09