X-On Electronics has gained recognition as a prominent supplier of SI4848DY-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4848DY-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI4848DY-T1-GE3 Vishay

Name: SI4848DY-T1-GE3
Brand: Vishay
SKU: SI4848DYT1GE3_Vishay
Availability: InStock
Rating: 5 (11 reviews)

SI4848DY-T1-GE3 electronic component of Vishay

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Part No.	SI4848DY-T1-GE3
Manufacturer:	Vishay
Category:	MOSFETs
Description:	MOSFET 150V 3.7A 3.0W 85mohm @ 10V
Datasheet:	SI4848DY-T1-GE3 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.1054 ea
Line Total: USD 1.11

Availability - 1752
Ship by Mon. 12 May to Thu. 15 May

MOQ: 1 Multiples: 1
Pack Size: 1

SI4848DY-T1-GE3 More Buying Options & Price Grid(s)

Availability Price Buy Price Quantity

1752

Ship by Mon. 12 May to Thu. 15 May

MOQ : 1
Multiples : 1

1 : USD 1.1054
10 : USD 0.9044
30 : USD 0.603
100 : USD 0.4749
500 : USD 0.4346
1000 : USD 0.4125

Specifications

Manufacturer

Vishay Vishay

Product Category

MOSFETs MOSFETs

RoHS - XON

E E

Id - Continuous Drain Current

3.7 A 3.7 A

Rds On - Drain-Source Resistance

85 mOhms 85 mOhms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

2 V 2 V

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

3 W 3 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

SO - 8 SO - 8

Packaging

Reel Reel

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

10 V 10 V

Qg - Gate Charge

17 nC 17 nC

Channel Mode

Enhancement Enhancement

Tradename

Trenchfet Trenchfet

Configuration

Single Single

Brand

Vishay / Siliconix Vishay / Siliconix

Continuous Drain Current

3.7 A 3.7 A

Drain-Source Breakdown Voltage

150 V 150 V

Gate-Source Breakdown Voltage

+/- 20 V +/- 20 V

Power Dissipation

1.5 W 1.5 W

Rds On

85 Mohms 85 Mohms

Factory Pack Quantity :

2500 2500

Height

1.75 mm 1.75 mm

Length

4.9 mm 4.9 mm

Series

Si4 Si4

Transistor Type

1 N - Channel 1 N - Channel

Width

3.9 mm 3.9 mm

Forward Transconductance - Min

15 S 15 S

Cnhts

8541290000 8541290000

Fall Time

17 ns 17 ns

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Product Type

Mosfet Mosfet

Rise Time

10 ns 10 ns

Subcategory

Mosfets Mosfets

Taric

8541290000 8541290000

Typical Turn-Off Delay Time

24 ns 24 ns

Typical Turn-On Delay Time

9 ns 9 ns

Notes:- Show Stocked Products With Similar Attributes.

SI4848DY-T1-GE3 Alternative Parts

We are delighted to provide the SI4848DY-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4848DY-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI4848DY-T1-GE3 is a power MOSFET produced by Vishay that operates with a drain-source voltage (VDS) of up to 150V and has a current rating of 3.7A and a power dissipation of 3.0 Watts. It has an average on-state resistance (RDS(on)) of 85mohm @ 10V. This part is based on the trench MOSFET technology which is used to decrease RDSon, reduce the capacitance of the device, reduce the cost and improve power efficiency. It features a low gate charge and low input capacitance which makes it suitable for fast switching applications such as server, automotive and power supply applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

BC may also be referenced as

BC COMPONENTS
BC COMPONENTS (VISHAY)
BCC
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DLE
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GS
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ROEDERSTEIN
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SFR
SILICONIX
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SIX
SPD
SPECTROL
SPECTROL ELECTRONICS
SPP
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TECHNO
VIR
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Vishay Beyschlag
Vishay Cera-Mite
Vishay Dale
Vishay Draloric
Vishay Electro-Films
Vishay Huntington
Vishay Mills
Vishay Milwaukee
Vishay Polytech
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Vishay / Cera-Mite
Vishay / Dale
Vishay / Draloric
Vishay / Electro-Films
Vishay / Huntington
VISHAY / LITE-ON
Vishay / MCB Industrie
Vishay / Mills
Vishay / Milwaukee
Vishay / Polytech
Vishay / Roederstein
Vishay / Sfernice
Vishay / Siliconix
Vishay / Spectrol
Vishay / Sprague
Vishay / Tansitor
Vishay / Techno
Vishay / Thin Film
Vishay / Vitramon
Vishay BC Components
Vishay Beyschlag
Vishay Beyschlag/Draloric/BC Components
VISHAY CERA-MITE
Vishay Dale
VISHAY DRALORIC
VISHAY ELECTRO-FILMS
VISHAY FOIL RESISTORS
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VISHAY FOIL RESISTORS / VPG
Vishay General Semiconductor
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Vishay Intertech
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Availability	Price	Buy Price	Quantity
1752 Ship by Mon. 12 May to Thu. 15 May MOQ : 1 Multiples : 1	1 : USD 1.1054 10 : USD 0.9044 30 : USD 0.603 100 : USD 0.4749 500 : USD 0.4346 1000 : USD 0.4125

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Hot	SI4866BDY-T1-E3 Vishay Semiconductors MOSFET 12V 21.5A 4.45W Stock : 0 Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Hot	SI4850BDY-T1-GE3 MOSFET 60V Vds 20V Vgs SO-8 Stock : 0 Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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