Si4866DY Vishay Siliconix N-Channel Reduced Q , Fast Switching MOSFET g FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Available 0.0055 at V = 4.5 V 17 GS TrenchFET Power MOSFETs 12 0.008 at V = 2.5 V 14 GS PWM Optimized for High Efficiency Low Output Voltage 100 % R Tested g APPLICATIONS Synchronous Rectifier Point-of-Load Synchronous Buck Converter D SO-8 S D 1 8 S D 2 7 G S D 3 6 G D 4 5 Top View S Ordering Information: Si4866DY-T1-E3 (Lead Pb)-free) N-Channel MOSFET Si4866DY-T1-GE3 (Lead Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage 12 DS V V Gate-Source Voltage 8 GS T = 25 C 17 11 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 14 8 A A Pulsed Drain Current I 50 DM a I 2.7 1.40 Continuous Source Current (Diode Conduction) S T = 25 C 3.0 1.6 A a P W Maximum Power Dissipation D T = 70 C 2.0 1.0 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 34 41 a R Maximum Junction-to-Ambient (MOSFET) thJA Steady State 67 80 C/W R Maximum Junction-to-Foot (Drain) Steady State 15 19 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 71699 www.vishay.com S09-0228-Rev. D, 09-Feb-09 1Si4866DY Vishay Siliconix MOSFET SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 0.6 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Body Leakage 100 nA GSS DS GS V = 9.6 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 9.6 V, V = 0 V, T = 70 C 5 DS GS J a I V 5 V, V = 4.5 V 40 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 17 0.0045 0.0055 GS D a R Drain-Source On-State Resistance DS(on) V = 2.5 V, I = 14 0.0065 0.008 GS D a g V = 6 V, I = 17 80 S Forward Transconductance fs DS D a V I = 2.7 A, V = 0 V 0.70 1.1 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 21 30 g Q V = 6 V, V = 4.5 V, I = 17 A Gate-Source Charge 4.6 nC gs DS GS D Gate-Drain Charge Q 3.5 gd R Gate Resistance 1.5 2.3 3.9 G Turn-On Delay Time t 28 42 d(on) t Rise Time V = 6 V, R = 6 32 48 r DD L I 1 A, V = 4.5 V, R = 6 Turn-Off Delay Time t 82 123 ns D GEN G d(off) t Fall Time 35 53 f Source-Drain Reverse Recovery Time t I = 2.7 A, dI/dt = 100 A/s 60 90 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 50 50 V = 10 V thru 2.5 V GS 40 40 2 V 30 30 20 20 T = 125 C C 10 10 25 C - 55 C 1.5 V 0 0 012345 0.0 0.5 1.0 1.5 2.0 2.5 V - Gate-to-Source Voltage (V) V - Drain-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71699 2 S09-0228-Rev. D, 09-Feb-09 I - Drain Current (A) D I - Drain Current (A) D