New Product Si4838BDY Vishay Siliconix N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET 0.0027 at V = 4.5 V 34 GS 100 % R Tested g 0.0032 at V = 2.5 V 12 31 33 nC GS 100 % UIS Tested 0.0040 at V = 1.8 V 28 GS APPLICATIONS Low V DC/DC IN SO-8 D S D 1 8 S 2 7 D S 3 6 D G G 4 5 D Top View S Ordering Information: Si4838BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit 12 Drain-Source Voltage V DS V 8 Gate-Source Voltage V GS 34 T = 25 C C 27 T = 70 C C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 22.5 A b, c T = 70 C 18.0 A A Pulsed Drain Current I 70 DM T = 25 C 5.1 C I Continuous Source-Drain Diode Current S b, c T = 25 C 2.2 A Single Pulse Avalanche Current I 20 AS L = 0.1 mH 20 Avalanche Energy E mJ AS 5.7 T = 25 C C 3.6 T = 70 C C P Maximum Power Dissipation W D b, c T = 25 C 2.50 A b, c T = 70 C 1.6 A T , T - 55 to 150 Operating Junction and Storage Temperature Range C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b,d R t 10 s 39 50 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 18 22 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 C/W. Document Number: 68964 www.vishay.com S-82662-Rev. A, 03-Nov-08 1New Product Si4838BDY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 12 V DS GS D V Temperature Coefficient V /T 12 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 3.2 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 0.4 1.0 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 nA GSS DS GS V = 12 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 12 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 4.5 V 30 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 15 A 0.0021 0.0027 GS D a R V = 2.5 V, I = 12 A 0.0025 0.0032 Drain-Source On-State Resistance DS(on) GS D V = 1.8 V, I = 10 A 0.0031 0.0040 GS D a g V = 15 V, I = 15 A 105 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 5760 iss C V = 6 V, V = 0 V, f = 1 MHz Output Capacitance 1730 pF oss DS GS C Reverse Transfer Capacitance 1145 rss V = 6 V, V = 4.5 V, I = 10 A 56 84 DS GS D Q Total Gate Charge g 33 50 nC Q Gate-Source Charge V = 6 V, V = 2.5 V, I = 10 A 5.9 gs DS GS D Q Gate-Drain Charge 12.5 gd R Gate Resistance f = 1 MHz 0.2 0.65 1.3 g t Turn-On Delay Time 25 50 d(on) t Rise Time V = 6 V, R = 0.6 29 55 r DD L I 10 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 140 240 D GEN g d(off) t Fall Time 35 65 f ns Turn-On Delay Time t 12 24 d(on) t Rise Time V = 6 V, R = 0.6 13 26 r DD L I 10 A, V = 8 V, R = 1 Turn-Off Delay Time t 56 100 D GEN g d(off) t Fall Time 10 20 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 5.1 S C A a I 70 Pulse Diode Forward Current SM V I = 3 A Body Diode Voltage 0.60 1.1 V SD S Body Diode Reverse Recovery Time t 52 100 ns rr Q Body Diode Reverse Recovery Charge 40 80 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 21 a ns t Reverse Recovery Rise Time 31 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68964 2 S-82662-Rev. A, 03-Nov-08