Si4630DY Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ) DS DS(on) I (A) g D Available 0.0027 at V = 10 V 36 TrenchFET Power MOSFET GS 25 49 nC 100 % R Tested 0.0032 at V = 4.5 V 29 g GS APPLICATIONS Synchronous Buck - Low Side - Notebook - Server - Workstation Synchronous Rectifier - POL SO-8 D SD 1 8 SD 2 7 SD 3 6 GD G 4 5 Top View S Ordering Information: Si4630DY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET Si4630DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage 25 DS V Gate-Source Voltage V 16 GS T = 25 C 40 C T = 70 C 32 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 27 A b, c T = 70 C 21 A A I 70 Pulsed Drain Current DM T = 25 C 7.0 C I Continuous Source-Drain Diode Current S b, c T = 25 C 3.0 A I Single Pulse Avalanche Current 30 AS L = 0.1 mH E mJ Avalanche Energy 45 AS T = 25 C 7.8 C T = 70 C 5.0 C Maximum Power Dissipation P W D b, c T = 25 C 3.5 A b, c T = 70 C 2.2 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit b, d R t 10 s 29 35 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) R 13 16 Steady State thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 80 C/W. Document Number: 73685 www.vishay.com S09-0138-Rev. C, 02-Feb-09 1Si4630DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 25 V DS GS D V Temperature Coefficient V /T 28 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 6 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 1.0 2.2 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 16 V 100 nA GSS DS GS V = 25 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 25 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 20 A 0.0022 0.0027 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 15 A 0.0026 0.0032 GS D a g V = 15 V, I = 20 A 120 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 6670 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 997 pF oss DS GS C Reverse Transfer Capacitance 531 rss V = 15 V, V = 10 V, I = 20 A 107.5 161 DS GS D Q Total Gate Charge g 49 73 nC Q V = 15 V, V = 4.5 V, I = 20 A Gate-Source Charge 15.7 gs DS GS D Q Gate-Drain Charge 13.6 gd R Gate Resistance f = 1 MHz 1.5 2.25 g t Turn-On Delay Time 37 56 d(on) t V = 15 V, R = 1.5 Rise Time 122 185 r DD L t I 10 A, V = 4.5 V, R = 1 Turn-Off DelayTime 47 71 d(off) D GEN g t Fall Time 15 23 f ns t Turn-On Delay Time 17 26 d(on) t V = 15 V, R = 1.5 Rise Time 93 140 r DD L t I 10 A, V = 10 V, R = 1 Turn-Off DelayTime 60 90 d(off) D GEN g t Fall Time 915 f Drain-Source Body Diode Characteristics I T = 25 C Continous Source-Drain Diode Current 7 S C A a I 70 Pulse Diode Forward Current SM V I = 3 A Body Diode Voltage 0.72 1.1 V SD S t Body Diode Reverse Recovery Time 47 70 ns rr Q Body Diode Reverse Recovery Charge 50 75 nC rr I = 13 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 23 a ns t Reverse Recovery Rise Time 24 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73685 2 S09-0138-Rev. C, 02-Feb-09