Si4590DY www.vishay.com Vishay Siliconix N- and P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a V (V) R ( ) MAX. I (A) Q (TYP.) DS DS(on) D g 100 % R and UIS tested g 0.057 at V = 10 V 5.6 GS N-Channel 100 4 Material categorization: 0.072 at V = 4.5 V 5 GS For definitions of compliance please see 0.183 at V = -10 V -3.4 GS P-Channel -100 11.6 www.vishay.com/doc 99912 0.205 at V = -4.5 V -3.2 GS APPLICATIONS SO-8 Dual D 2 D H bridge / DC-AC inverter 5 2 D 6 1 - Brushless DC motors D 7 1 8 D 1 S 2 4 G G 33 2 2 22 SS G 22 1 GG 11 1 S 1 Top View N-Channel MOSFET P-Channel MOSFET Ordering Information: S D 1 2 Si4590DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL N-CHANNEL P-CHANNEL UNIT Drain-Source Voltage V 100 -100 DS V Gate-Source Voltage V 20 GS T = 25 C 5.6 -3.4 F T = 70 C 4.5 -2.7 F Continuous Drain Current (T = 150 C) I J D b,c b,c T = 25 C 4.5 -2.5 A b,c b,c T = 70 C 3.6 -2 A Pulsed Drain Current (100 s Pulse Width) I 30 -20 A DM T = 25 C 3-3.5 F Source-Drain Current Diode Current I S b,c b,c T = 25 C 2 -1.9 A Pulsed Source-Drain Current (100 s Pulse Width) I 30 -20 SM Single Pulse Avalanche Current I 5-20 AS L = 0.1 mH Single Pulse Avalanche Energy E 1.3 20 mJ AS T = 25 C 3.6 4.2 F T = 70 C 2.3 2.7 F Maximum Power Dissipation P W D b,c b,c T = 25 C 2.3 2.3 A b,c b,c T = 70 C 1.5 1.5 A Operating Junction and Storage Temperature Range T , T -55 to 150 C J stg THERMAL RESISTANCE RATINGS N-CHANNEL P-CHANNEL PARAMETER SYMBOL UNIT TYP. MAX. TYP. MAX. b,d Maximum Junction-to-Ambient t 10 s R 35 55 33 55 thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 20 35 17 30 thJF Notes a. Based on T = 25 C. F b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 90 C/W (n-channel) and 90 C/W (p-channel). S14-0146-Rev. A, 27-Jan-14 Document Number: 62937 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si4590DY www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static V = 0 V, I = 250 A N-Ch 100 - - GS D Drain-Source Breakdown Voltage V V DS V = 0 V, I = -250 A P-Ch -100 - - GS D I = 250 A N-Ch - 70 - D V Temperature Coefficient V /T DS DS J I = -250 A P-Ch - -103 - D mV/C I = 250 A N-Ch - -5.7 - D V Temperature Coefficient V /T GS(th) GS(th) J I = -250 A P-Ch - 4.5 - D V = V , I = 250 A N-Ch 1.5 - 2.5 DS GS D Gate Threshold Voltage V V GS(th) V = V , I = -250 A P-Ch -1.5 - -2.5 DS GS D N-Ch - - 100 Gate-Body Leakage I V = 0 V, V = 20 V nA GSS DS GS P-Ch - - -100 V = 100 V, V = 0 V N-Ch - - 1 DS GS V = -100 V, V = 0 V P-Ch - - -1 DS GS Zero Gate Voltage Drain Current I A DSS V = 100 V, V = 0 V, T = 55 C N-Ch - - 10 DS GS J V = -100 V, V = 0 V, T = 55 C P-Ch - - -10 DS GS J V = 5 V, V = 10 V N-Ch 10 - - DS GS b On-State Drain Current I A D(on) V = -5 V, V = -10 V P-Ch -10 - - DS GS V = 10 V, I = 2 A N-Ch - 0.047 0.057 GS D V = -10 V, I = -2 A P-Ch - 0.150 0.183 GS D b Drain-Source On-State Resistance R DS(on) V = 4.5 V, I = 1.5 A N-Ch - 0.059 0.072 GS D V = -4.5 V, I = -1 A P-Ch - 0.165 0.205 GS D V = 15 V, I = 2 A N-Ch - 9 - DS D b Forward Transconductance g S fs V = -15 V, I = -2 A P-Ch - 9.3 - DS D a Dynamic N-Ch - 360 - Input Capacitance C iss P-Ch - 1150 - N-Channel V = 50 V, V = 0 V, f = 1 MHz DS GS N-Ch - 130 - Output Capacitance C pF oss P-Ch - 65 - P-Channel V = -50 V, V = 0 V, f = 1 MHz DS GS N-Ch - 20 - Reverse Transfer Capacitance C rss P-Ch - 40 - V = 50 V, V = 10 V, I = 4.5 A N-Ch - 7.5 11.5 DS GS D V = -50 V, V = -10 V, I = -5 A P-Ch - 24 36 DS GS D Total Gate Charge Q g N-Ch - 4 6 N-Channel P-Ch - 11.6 18 nC V = 50 V, V = 4.5 V, I = 4.5 A DS GS D N-Ch - 1.2 - Gate-Source Charge Q gs P-Ch - 3.8 - P-Channel V = -50 V, V = -4.5 V, I = -5 A N-Ch - 2 - DS GS D Gate-Drain Charge Q gd P-Ch - 5 - N-Ch 0.6 3.3 6.6 Gate Resistance R f = 1 MHz g P-Ch 3 13 26 S14-0146-Rev. A, 27-Jan-14 Document Number: 62937 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000