Si4686DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Available 0.0095 at V = 10 V 18.2 GS Extremely Low Q WFET Technology gd 30 9.2 nC 0.014 at V = 4.5 V 15 for Low Switching Losses GS TrenchFET Power MOSFETs 100 % R Tested g SO-8 APPLICATIONS D S D 1 8 High-Side DC/DC Conversion S D - Notebook 2 7 - Server S D 3 6 G D 4 5 G Top View S Ordering Information: Si4686DY-T1-E3 (Lead (Pb)-free) Si4686DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V 30 DS V V Gate-Source Voltage 20 GS T = 25 C 18.2 C T = 70 C 14.5 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 13.8 b, c T = 70 C A 11 A Pulsed Drain Current I 50 DM T = 25 C 4.3 C I Continuous Source-Drain Diode Current S b, c T = 25 C A 2.5 Single-Pulse Avalanche Current I 10 AS L = 0.1 mH E Single-Pulse Avalanche Energy 5mJ AS T = 25 C 5.2 C T = 70 C 3.3 C Maximum Power Dissipation P W D b, c T = 25 C A 3.0 b, c T = 70 C A 1.9 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d R t 10 s 35 42 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 20 24 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 80 C/W. Document Number: 73422 www.vishay.com S09-0228-Rev. B, 09-Feb-09 1Si4686DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T 31.3 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 6 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 13V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 50 A On-State Drain Current D(on) DS GS V = 10 V, I = 13.8 A 0.0078 0.0095 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 11.4 A 0.011 0.014 GS D a g V = 15 V, I = 13.8 A 56 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1220 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 230 pF oss DS GS C Reverse Transfer Capacitance 98 rss V = 15 V, V = 10 V, I = 13.8 A 17 26 DS GS D Q Total Gate Charge g 9.2 14 nC Q Gate-Source Charge V = 15 V, V = 5 V, I = 13.8 A 4.1 gs DS GS D Q Gate-Drain Charge 2.8 gd R Gate Resistance f = 1 MHz 0.8 1.2 g t Turn-On Delay Time 20 30 d(on) t Rise Time V = 15 V, R = 1.5 20 30 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 20 30 d(off) Fall Time t 815 f ns t Turn-On Delay Time 13 20 d(on) Rise Time t 16 25 V = 15 V, R = 1.5 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 23 35 d(off) Fall Time t 815 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 4.3 S C A a I 50 Pulse Diode Forward Current SM Body Diode Voltage V I = 2.6 A 0.8 1.2 V SD S t Body Diode Reverse Recovery Time 25 50 ns rr Body Diode Reverse Recovery Charge Q 15 30 nC rr I = 2.6 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 12.5 a ns Reverse Recovery Rise Time t 12.5 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73422 2 S09-0228-Rev. B, 09-Feb-09