Si4936BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.035 at V = 10 V 6.9 TrenchFET Power MOSFET GS 30 4.5 nC Compliant to RoHS Directive 2002/95/EC 0.051 at V = 4.5 V 5.7 GS APPLICATIONS Low Current DC/DC Conversion Notebook System Power SO-8 D S D D 1 8 1 1 1 2 G D 2 7 1 1 D S 3 6 2 2 G D 2 4 5 2 G G 1 2 Top View S S 1 2 Ordering Information: Si4936BDY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET N-Channel MOSFET Si4936BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS 6.9 T = 25 C C T = 70 C 5.5 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C 5.9 A a, b T = 70 C A 4.7 A Pulsed Drain Current I 30 DM T = 25 C 2.3 C I Continuous Source-Drain Diode Current S a, b T = 25 C 1.7 A T = 25 C 2.8 C T = 70 C 1.8 C P Maximum Power Dissipation W D a, b T = 25 C A 2 a, b T = 70 C A 1.3 Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, c t 10 s R 58 62.5 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 38 45 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 110 C/W. Document Number: 74469 www.vishay.com S09-0767-Rev. B, 04-May-09 1Si4936BDY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T 26.5 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5.6 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.5 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 ns GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I DSS A V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 5.9 A 0.029 0.035 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 4.9 A 0.042 0.051 GS D a g V = 10 V, I = 5.9 A 12 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 530 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 100 pF oss DS GS C Reverse Transfer Capacitance 55 rss V = 15 V, V = 10 V, I = 5.9 A 9.1 15 DS GS D Q Total Gate Charge g 4.5 7 nC Gate-Source Charge Q = 15 V, V = 4.5 V, I = 5.9 A 1.8 V gs DS GS D Q Gate-Drain Charge 1.7 gd Gate Resistance R f = 1 MHz 3 g t Turn-On Delay Time 20 30 d(on) Rise Time t 130 195 V = 15 V, R = 3.2 r DD L I 4.7 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 12 20 d(off) Fall Time t 32 50 f ns t Turn-On Delay Time 510 d(on) Rise Time t V = 15 V, R = 3.2 25 40 r DD L I 4.7 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 12 20 d(off) t Fall Time 10 15 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 6.9 S C A I Pulse Diode Forward Current 30 SM V I = 4.7 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 20 40 ns rr Q Body Diode Reverse Recovery Charge 12 24 nC rr I = 4.7 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 11 a ns Reverse Recovery Rise Time t 9 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 74469 2 S09-0767-Rev. B, 04-May-09