New Product Si4936CDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 d V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.040 at V = 10 V TrenchFET Power MOSFET 5.8 GS 30 2.8 nC 0.050 at V = 4.5 V 5.5 GS APPLICATIONS Low Current DC/DC Conversion Notebook System Power SO-8 D 1 D 2 S D 1 8 1 1 D G 2 7 1 1 D S 3 6 2 2 G D 4 5 2 2 G 1 G 2 Top View S 1 S 2 Ordering Information: Si4936CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 30 DS V V Gate-Source Voltage 20 GS T = 25 C 5.8 C T = 70 C 4.6 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C A 5.0 a, b T = 70 C 4.0 A A I Pulsed Drain Current 20 DM T = 25 C 1.9 C I Continuous Source-Drain Diode Current S a, b T = 25 C A 1.4 T = 25 C 2.3 C T = 70 C 1.5 C P Maximum Power Dissipation W D a, b T = 25 C 1.7 A a, b T = 70 C 1.1 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, c t 10 s R 58 75 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 42 55 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 110 C/W. d. Based on T = 25 C. C Document Number: 69097 www.vishay.com S09-0390-Rev. C, 09-Mar-09 1New Product Si4936CDY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T 32 DS DS J I = 250 A D mV/C V Temperature Coefficient V /T - 5 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I DSS A V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 15 A On-State Drain Current D(on) DS GS V = 10 V, I = 5 A 0.033 0.040 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 4.7 A 0.041 0.050 GS D a g V = 10 V, I = 5 A 15 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 325 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 60 pF oss DS GS C Reverse Transfer Capacitance 30 rss V = 15 V, V = 10 V, I = 5 A 69 DS GS D Q Total Gate Charge g 2.8 4.2 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 5 A 1.1 gs DS GS D Q Gate-Drain Charge 0.8 gd R Gate Resistance f = 1 MHz 0.6 2.8 5.6 g t Turn-On Delay Time 12 18 d(on) t Rise Time V = 15 V, R = 3.8 13 20 r DD L I 4 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 16 25 d(off) Fall Time t 11 17 f ns t Turn-On Delay Time 48 d(on) Rise Time t 918 V = 15 V, R = 3.8 r DD L I 4 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 11 20 d(off) Fall Time t 815 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 1.9 S C A I Pulse Diode Forward Current 20 SM V I = 4 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 11 20 ns rr Q Body Diode Reverse Recovery Charge 48 nC rr I = 4 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 6 a ns t Reverse Recovery Rise Time 5 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69097 2 S09-0390-Rev. C, 09-Mar-09