Si4944DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available V (V) R ()I (A) DS DS(on) D TrenchFET Power MOSFET 0.0095 at V = 10 V RoHS 12.2 GS 30 100 % R Tested COMPLIANT g 0.016 at V = 4.5 V 9.4 GS APPLICATIONS DC/DC Conversion Load Switching SO-8 D D 1 2 S D 1 1 8 1 G D 1 2 7 1 S D 3 6 2 2 G 1 G 2 G D 2 4 5 2 Top View S S 1 2 Ordering Information: Si4944DY-T1-E3 (Lead (Pb)-free) Si4944DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage 30 DS V Gate-Source Voltage V 20 GS T = 25 C 12.2 9.3 A a I Continuous Drain Current (T = 150 C) D J T = 85 C 8.8 6.7 A A I Pulsed Drain Current 30 DM a I 1.9 1.1 Continuous Source Current (Diode Conduction) S T = 25 C 2.3 1.3 A a P W Maximum Power Dissipation D T = 85 C 1.2 0.7 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 42 55 a R Maximum Junction-to-Ambient thJA Steady State 75 95 C/W Maximum Junction-to-Foot (Drain) Steady State R 19 25 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 72512 www.vishay.com S-82284-Rev. B, 22-Sep-08 1Si4944DY Vishay Siliconix MOSFET SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 13V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 85 C 5 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 12.2 A 0.0075 0.0095 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 9.4 A 0.013 0.016 GS D a g V = 10 V, I = 12.2 A 32 S Forward Transconductance fs DS D a V I = 1.9 A, V = 0 V 0.8 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 13.5 21 g Q V = 15 V, V = 4.5 V, I = 12.2 A Gate-Source Charge 7.1 nC gs DS GS D Gate-Drain Charge Q 4.7 gd R Gate Resistance f = 1 MHz 0.5 1.0 1.7 g Turn-On Delay Time t 10 15 d(on) t Rise Time V = 15 V, R = 15 10 15 r DD L I 1 A, V = 10 V, R = 6 Turn-Off Delay Time t 40 60 ns D GEN G d(off) t Fall Time 12 20 f Source-Drain Reverse Recovery Time t I = 1.9 A, dI/dt = 100 A/s 45 70 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 30 30 V = 10 thru 5 V GS 24 24 4 V 18 18 12 12 T = 125 C C 6 6 25 C 3 V - 55 C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 V - Drain-to-Source Voltage (V) DS V - Gate-to-Source Voltage (V) GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72512 2 S-82284-Rev. B, 22-Sep-08 I - Drain Current (A) D I - Drain Current (A) D