Si4932DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a, e V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET 0.015 at V = 10 V 100 % R Tested 8 GS g 30 14.7 100 % UIS Tested 0.017 at V = 4.5 V 8 GS APPLICATIONS DC/DC Conversion Load Switching D D 1 2 SO-8 S D 1 1 8 1 G D 1 2 7 1 G G 1 2 S D 2 3 6 2 G D 2 4 5 2 Top View S S 1 2 Ordering Information: Si4932DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage 30 DS V Gate-Source Voltage V 20 GS e T = 25 C 8 C e T = 70 C C 8 Continuous Drain Current (T = 150 C) I J D b, c, e T = 25 C A 8 b, c T = 70 C A 6.8 I A Pulsed Drain Current (10 s Pulse Width) 30 DM T = 25 C 2.6 C Source-Drain Current Diode Current I S b, c T = 25 C A 1.7 I Pulsed Source-Drain Current 30 SM Single Pulse Avalanche Current I 20 AS L = 0.1 mH Single Pulse Avalanche Energy E mJ 20 AS T = 25 C 3.2 C T = 70 C 2.1 C Maximum Power Dissipation P W D b, c T = 25 C A 2 b, c T = 70 C A 1.28 Operating Junction and Storage Temperature Range T , T C - 55 to 150 J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 10 s R 47 62.5 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 28 38 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 110 C/W. e. Package limited. Document Number: 69012 www.vishay.com S-83042-Rev. A, 22-Dec-08 1Si4932DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T 34 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 6 GS(th) GS(th) J V = V , I = 250 A Gate Threshold Voltage V 1.2 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate Body Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J b I V = 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 7 A 0.0122 0.015 GS D b R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 5 A 0.0138 0.017 GS D b g V = 15 V, I = 7 A 40 S Forward Transconductance fs DS D a Dynamic Input Capacitance C 1750 iss N-Channel C Output Capacitance 265 pF oss V = 15 V, V = 0 V, f = 1 MHz DS GS Reverse Transfer Capacitance C 115 rss V = 15 V, V = 10 V, I = 5 A 32 48 DS GS D Q Total Gate Charge g 14.7 22 nC N-Channel Gate-Source Charge Q 5.1 gs V = 15 V, V = 4.5 V, I = 5 A DS GS D Q Gate-Drain Charge 3.7 gd Gate Resistance R f = 1 MHz 0.2 1.0 2.0 g t Turn-On Delay Time 21 40 d(on) N-Channel Rise Time t 10 20 r V = 15 V, R = 3 DD L t Turn-Off Delay Time 26 50 d(off) I 5 A, V = 4.5 V, R = 1 D GEN g t Fall Time 816 f ns t Turn-On Delay Time 918 d(on) N-Channel t Rise Time 816 r V = 15 V, R = 3 DD L t Turn-Off Delay Time 24 45 d(off) I 5 A, V = 10 V, R = 1 D GEN g t Fall Time 816 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 2.6 S C A a I 30 Pulse Diode Forward Current SM Body Diode Voltage V I = 2 A 0.75 1.2 V SD S t Body Diode Reverse Recovery Time 23 45 ns rr Q Body Diode Reverse Recovery Charge 16 32 nC rr N-Channel I = 5 A, dI/dt = 100 A/s, T = 25 C t F J Reverse Recovery Fall Time 13 a ns t Reverse Recovery Rise Time 10 b Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 % Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69012 2 S-83042-Rev. A, 22-Dec-08