Si4916DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Available 0.018 at V = 10 V 10 GS LITTLE FOOT Plus Integrated Schottky Channel-1 6.6 0.023 at V = 4.5 V 8.5 GS 100 % R Tested g 30 0.018 at V = 10 V 10.5 GS Channel-2 8.9 APPLICATIONS 0.022 at V = 4.5 V 9.3 GS DC/DC Converters - Notebook SCHOTTKY PRODUCT SUMMARY V (V) SD D 1 V (V) I (A) Diode Forward Voltage DS F 30 0.50 V at 1.0 A 2.0 SO-8 G 1 D G 1 1 8 1 N-Channel 1 MOSFET D S /D 2 7 S /D 1 1 2 1 2 G S /D 2 3 6 1 2 S S /D 2 4 5 1 2 Schottky Diode G 2 T op V i e w N-Channel 2 MOSFET Ordering Information: Si4916DY-T1-E3 (Lead (Pb)-free) S 2 Si4916DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Channel-1Channel-2Unit V Drain-Source Voltage 30 DS V V Gate-Source Voltage 20 GS T = 25 C 10 10.5 C T = 70 C 88.3 C a, b I Continuous Drain Current (T = 150 C) D J a, b, c a, b, c T = 25 C 7.8 A 7.5 a ,b, c a, b, c T = 70 C A 6 6.3 Pulsed Drain Current (10 s Pulse Width) I 40 40 A DM T = 25 C 33.2 C I Continuous Source-Drain Diode Current S a, b, c a, b, c T = 25 C A 1.7 1.8 PulseD Source-Drain Current I 40 40 SM I Single-Pulse Avalanche Current 15 AS L = 0.1 mH Single-Pulse Avalanche Energy E 11.2 mJ AS T = 25 C 3.3 3.5 C T = 70 C 2.1 2.2 C a, b P W Maximum Power Dissipation D a, b, c a, b, c T = 25 C A 1.9 2.0 a, b, c a, b, c T = 70 C A 1.2 1.3 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. Document Number: 74331 www.vishay.com S09-0540-Rev. B, 06-Apr-09 1Si4916DY Vishay Siliconix THERMAL RESISTANCE RATINGS Channel-1 Channel-2 Symbol Parameter Typ. Max. Typ. Max. Unit a t 10 s R 54 65 47 60 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 32 38 30 35 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. b. Maximum under Steady State conditions is 112 C/W for Channel 1 and 107 C/W for Channel 2. MOSFET SPECIFICATIONS T = 25 C, unless otherwise noted J a Parameter Symbol Test Conditions Min.Typ. Max. Unit Static Ch-1 30 Drain-Source Breakdown Voltage V V = 0 V, I = 250 A V DS GS D Ch-2 30 Ch-1 24 V Temperature Coefficient V /T mV/C DS DS J Ch-2 25 I = 250 A D Ch-1 - 6 V Temperature Coefficient V /T GS(th) GS(th) J Ch-2 - 6 V Ch-1 1.5 3.0 Gate Threshold Voltage V V = V , I = 250 A GS(th) DS GS D Ch-2 1.5 2.7 Ch-1 100 Gate-Body Leakage I V = 0 V, V = 20 V nA GSS DS GS Ch-2 100 Ch-1 1 V = 30 V, V = 0 V DS GS Ch-2 100 Zero Gate Voltage Drain Current I A DSS Ch-1 15 V = 30 V, V = 0 V, T = 85 C DS GS J Ch-2 2000 Ch-1 20 b I V = 5 V, V = 10 V A On-State Drain Current D(on) DS GS Ch-2 20 V = 10 V, I = 10 A Ch-1 0.0145 0.018 GS D V = 10 V, I = 10.5 A Ch-2 0.015 0.018 GS D b R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 8.5 A Ch-1 0.019 0.023 GS D V = 4.5 V, I = 9.3 A Ch-2 0.018 0.022 GS D V = 15 V, I = 10 A Ch-1 30 DS D b g S Forward Transconductance fs V = 15 V, I = 10.5 A Ch-2 35 DS D I = 1.7 A, V = 0 V Ch-1 0.75 1.1 S GS b V V Diode Forward Voltage SD I = 1 A, V = 0 V Ch-2 0.47 0.5 S GS a Dynamic Ch-1 6.6 10 Q Total Gate Charge g Channel-1 Ch-2 8.9 14 V = 15 V, V = 4.5 V, I = 10 A DS GS D Ch-1 2.9 Q Gate-Source Charge nC gs Ch-2 3.4 Channel-2 Ch-1 2.3 V = 15 V, V = 4.5 V, I = - 10.5 A DS GS D Q Gate-Drain Charge gd Ch-2 2.4 Ch-1 0.5 1.9 2.9 R Gate Resistance g Ch-2 0.5 2.3 3.5 www.vishay.com Document Number: 74331 2 S09-0540-Rev. B, 06-Apr-09