Si4920DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.025 at V = 10 V 6.9 GS TrenchFET Power MOSFETs 30 0.035 at V = 4.5 V 5.8 GS 100 % R Tested g Compliant to RoHS Directive 2002/95/EC D D 1 2 SO-8 S D 1 1 8 1 G D 2 7 1 1 S D 2 3 6 2 G G 1 2 G D 2 4 5 2 Top View S S 1 2 Ordering Information: Si4920DY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET N-Channel MOSFET Si4920DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage 30 DS V V Gate-Source Voltage 20 GS T = 25 C 6.9 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 5.5 A A I Pulsed Drain Current (10 s Pulse Width) 40 DM a I 1.7 Continuous Source Current (Diode Conduction) S T = 25 C 2 A a P W Maximum Power Dissipation D T = 70 C 1.3 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol LimitUnit a R 62.5 C/W Maximum Junction-to-Ambient thJA Notes: a. Surface Mounted on FR4 board, t 10 s. Document Number: 70667 www.vishay.com S09-0767-Rev. E, 04-May-09 1Si4920DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 1V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 25 DS GS J a I V 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 6.9 A 0.020 0.025 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 5.8 A 0.026 0.035 GS D a g V = 15 V, I = 6.9 A 25 S Forward Transconductance fs DS D a V I = 1.7 A, V = 0 V 1.2 V Diode Forward Voltage SD S GS b Dynamic Q V = 15 V, V = 5 V, I = 6.9 A Gate Charge 15 23 g DS GS D Total Gate Charge Q 30 50 gt nC Q V = 15 V, V = 10 V, I = 6.9 A Gate-Source Charge 7.5 gs DS GS D Gate-Drain Charge Q 3.5 gd R Gate Resistance f = 1 MHz 2 3 g Turn-On Delay Time t 12 20 d(on) t Rise Time V = 15 V, R = 15 10 20 r DD L I 1 A, V = 10 V, R = 6 Turn-Off Delay Time t 60 90 ns D GEN g d(off) t Fall Time 15 30 f Source-Drain Reverse Recovery Time t I = 1.7 A, dI/dt = 100 A/s 50 90 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 70667 2 S09-0767-Rev. E, 04-May-09