X-On Electronics has gained recognition as a prominent supplier of SI4925DDY-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4925DDY-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI4925DDY-T1-GE3 Vishay

SI4925DDY-T1-GE3 electronic component of Vishay
SI4925DDY-T1-GE3 Vishay
SI4925DDY-T1-GE3 MOSFETs
SI4925DDY-T1-GE3  Semiconductors

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See Product Specifications
Part No. SI4925DDY-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET -30V Vds 20V Vgs SO-8
Datasheet: SI4925DDY-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.9088 ea
Line Total: USD 0.91 
Availability - 6399
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2425
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 2500
Multiples : 2500
2500 : USD 0.439
5000 : USD 0.4289
25000 : USD 0.423

6399
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ : 1
Multiples : 1
1 : USD 0.9088
10 : USD 0.7119
30 : USD 0.5373
100 : USD 0.4011
500 : USD 0.3656
1000 : USD 0.3451

64239
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 1.2875
10 : USD 0.8184
100 : USD 0.5643
500 : USD 0.4851
1000 : USD 0.4345
2500 : USD 0.4081
5000 : USD 0.3916
25000 : USD 0.3817

2802
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 1.134
10 : USD 0.9464
32 : USD 0.546
88 : USD 0.518
2500 : USD 0.4928

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SI4925DDY-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4925DDY-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI4925DDY-T1-GE3 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by Vishay. This component is a type of power transistor with a dual N-channel configuration and an SO-8 package. It has a drain-source Voltage of -30V and a Gate-Source Voltage of 20V. This component also has an On-resistance rating of 33mO at a Gate-Source Voltage of 10V and 5A Drain-Current. Additionally, it has a fast switching speed, making it ideal for power switching applications where fast switching times are required. This component is a great choice for applications which require low on-state resistance and low gate drive requirements. It is also a great choice for applications where a low voltage drop is necessary.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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