X-On Electronics has gained recognition as a prominent supplier of SI4925DDY-T1-GE3 MOSFET across the USA, India, Europe, Australia, and various other global locations. SI4925DDY-T1-GE3 MOSFET are a product manufactured by Vishay. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

SI4925DDY-T1-GE3 Vishay

SI4925DDY-T1-GE3 electronic component of Vishay
Images are for reference only
See Product Specifications
Part No.SI4925DDY-T1-GE3
Manufacturer: Vishay
Category: MOSFET
Description: MOSFET -30V Vds 20V Vgs SO-8
Datasheet: SI4925DDY-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9235 ea
Line Total: USD 0.92

Availability - 43958
Ship by Thu. 08 Aug to Mon. 12 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1514
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 1
Multiples : 1
1 : USD 1.1946
10 : USD 0.977
100 : USD 0.7608
500 : USD 0.6451
1000 : USD 0.5118
2500 : USD 0.5021

12125
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 2500
Multiples : 2500
2500 : USD 0.403
5000 : USD 0.403
7500 : USD 0.403
10000 : USD 0.403
12500 : USD 0.403

533
Ship by Fri. 09 Aug to Wed. 14 Aug
MOQ : 1
Multiples : 1
1 : USD 0.8271
10 : USD 0.677
30 : USD 0.6021
100 : USD 0.5272
500 : USD 0.4821
1000 : USD 0.4595

43958
Ship by Thu. 08 Aug to Mon. 12 Aug
MOQ : 1
Multiples : 1
1 : USD 0.9235
10 : USD 0.7636
100 : USD 0.6118
500 : USD 0.5336
1000 : USD 0.4358
2500 : USD 0.4266
5000 : USD 0.422
10000 : USD 0.4094
25000 : USD 0.399

3633
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 1
Multiples : 1
1 : USD 1.105
10 : USD 0.9399
32 : USD 0.533
87 : USD 0.494
2500 : USD 0.4836

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SI4925DDY-T1-GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4925DDY-T1-GE3 and other electronic components in the MOSFET category and beyond.

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The SI4925DDY-T1-GE3 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by Vishay. This component is a type of power transistor with a dual N-channel configuration and an SO-8 package. It has a drain-source Voltage of -30V and a Gate-Source Voltage of 20V. This component also has an On-resistance rating of 33mO at a Gate-Source Voltage of 10V and 5A Drain-Current. Additionally, it has a fast switching speed, making it ideal for power switching applications where fast switching times are required. This component is a great choice for applications which require low on-state resistance and low gate drive requirements. It is also a great choice for applications where a low voltage drop is necessary.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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