Si4894BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Available 0.011 at V = 10 V 12 GS TrenchFET Power MOSFET 30 0.016 at V = 4.5 V 9.8 GS 100 % R Tested g D SO-8 D S 1 8 2 7 D S G 3 6 D S 4 5 D G Top View S Ordering Information: Si4894BDY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET Si4894BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage 30 DS V Gate-Source Voltage V 20 GS T = 25 C 12 8.9 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 9.5 7.1 A I Pulsed Drain Current 40 A DM a I 2.3 1.3 Continuous Source Current (Diode Conduction) S Single Pulse Avalanche Current I 20 AS L = 0.1 mH E Avalanche Energy 20 mJ AS T = 25 C 2.5 1.4 A a P W Maximum Power Dissipation D T = 70 C 1.6 0.9 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 43 50 a R Maximum Junction-to-Ambient thJA Steady State 73 90 C/W R Maximum Junction-to-Foot (Drain) Steady State 19 25 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 72993 www.vishay.com S09-0540-Rev. D, 06-Apr-09 1Si4894BDY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 1.0 3.0 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 12 A 0.009 0.011 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 9.8 A 0.013 0.016 GS D a g V = 15 V, I = 12 A 32 S Forward Transconductance fs DS D a V I = 2.3 A, V = 0 V 0.76 1.1 V Diode Forward Voltage SD S GS b Dynamic C Input Capacitance 1580 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 295 pF oss DS GS Reverse Transfer Capacitance C 140 rss V = 15 V, V = 5 V, I = 12 A 13.2 20 DS GS D Q Total Gate Charge g 25.4 38 nC Gate-Source Charge Q V = 15 V, V = 10 V, I = 12 A 5.3 gs DS GS D Q Gate-Drain Charge 4.3 gd Gate Resistance R 0.9 1.8 2.7 g t Turn-On Delay Time 13 20 d(on) Rise Time t 10 15 V = 15 V, R = 15 r DD L I 1 A, V = 10 V, R = 6 t Turn-Off Delay Time D GEN g 33 50 ns d(off) t Fall Time 10 15 f t I = 2.3 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 25 40 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 40 40 V = 10 V thru V 5 35 GS 35 30 4 V 30 25 25 20 20 15 15 T = 125 C C 10 10 5 5 25 C 3 V - 55 C 0 0 012345 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 V - Drain-to-Source Voltage (V) DS V - Gate-to-Source Voltage (V) GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72993 2 S09-0540-Rev. D, 06-Apr-09 I - Drain Current (A) D I - Drain Current (A) D