Si4925BDY Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.025 at V = - 10 V - 7.1 GS TrenchFET Power MOSFET - 30 0.041 at V = - 4.5 V - 5.5 GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switches - Notebook PCs - Desktop PCs - Game Stations SO-8 S S 1 2 S D 1 1 8 1 G D 2 7 1 1 G G S D 1 2 2 3 6 2 G D 4 5 2 2 Top View D D 1 2 Ordering Information: Si4925BDY-T1-E3 (Lead (Pb)-free) Si4925BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V - 30 DS V V Gate-Source Voltage 20 GS T = 25 C - 7.1 - 5.3 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 5.7 - 4.3 A A I Pulsed Drain Current - 40 DM a I - 1.7 - 0.9 Continuous Source Current (Diode Conduction) S T = 25 C 2.0 1.1 A a P W Maximum Power Dissipation D T = 70 C 1.3 0.7 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 50 62.5 a R Maximum Junction-to-Ambient thJA Steady State 85 110 C/W R Maximum Junction-to-Foot (Drain) Steady State 30 40 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 72001 www.vishay.com S09-0869-Rev. D, 18-May-09 1Si4925BDY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = V , I = - 250 A Gate Threshold Voltage - 1 - 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 30 V, V = 0 V, T = 55 C - 25 DS GS J a I V = - 5 V, V = - 10 V - 40 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 7.1 A 0.020 0.025 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 5.5 A 0.033 0.041 GS D a g V = - 10 V, I = - 7.1 A 20 S Forward Transconductance fs DS D a V I = - 1.7 A, V = 0 V - 0.8 - 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 33 50 g Q V = - 15 V, V = - 10 V, I = - 7.1 A Gate-Source Charge 5.4 nC gs DS GS D Gate-Drain Charge Q 8.9 gd t Turn-On Delay Time 915 d(on) Rise Time t 12 20 V = - 15 V, R = 15 r DD L I - 1 A, V = - 10 V, R = 6 t Turn-Off Delay Time D GEN g 60 90 ns d(off) Fall Time t 34 50 f t I = - 1.7 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 30 60 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 40 40 T = - 55 C C V = 10 V thru 5 V GS 25 C 30 30 4V 125 C 20 20 10 10 3 V, 2 V 0 0 0 1234 5 0 1234 5 V - Drain-to-Source Voltage (V) DS V - Gate-to-Source Voltage (V) GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72001 2 S09-0869-Rev. D, 18-May-09 I - Drain Current (A) D I - Drain Current (A) D