X-On Electronics has gained recognition as a prominent supplier of SI4888DY-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4888DY-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI4888DY-T1-E3 Vishay

SI4888DY-T1-E3 electronic component of Vishay

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Part No.	SI4888DY-T1-E3
Manufacturer:	Vishay
Category:	MOSFETs
Description:	MOSFET 30V 16A 3.5W Ultra-low capacitance TVS diode array for protection of high-speed data lines.
Datasheet:	SI4888DY-T1-E3 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.3028 ea
Line Total: USD 1.3

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

SI4888DY-T1-E3 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 27 Dec to Thu. 02 Jan MOQ : 1 Multiples : 1	1 : USD 1.3028 10 : USD 1.2801 50 : USD 1.2008 250 : USD 1.0026 500 : USD 0.9346 1000 : USD 0.9006

We are delighted to provide the SI4888DY-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4888DY-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The Vishay SI4888DY-T1-E3 is a monolithic, high-speed, NPN silicon transistor designed for use as an amplifier, level shifter, or switch. It has a maximum collector-emitter voltage (VCEO) of 40V, collector-base voltage (VCBO) of 45V, and an emitter-base voltage (VEBO) of 6V. This device has a maximum collector current (IC) of 800 mA and maximum power dissipation (PD) of 1.5 W. It also has a high gain (hFE) at 200 minimum, a high frequency range of 300 MHz minimum, and a maximum operating temperature of 150°C.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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SIX
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SPP
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TECHNO
VIR
Vishay BC Components
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Vishay / BC Components
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Vishay / Huntington
VISHAY / LITE-ON
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Vishay / Mills
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Vishay / Polytech
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Vishay / Spectrol
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Vishay BC Components
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Vishay Beyschlag/Draloric/BC Components
VISHAY CERA-MITE
Vishay Dale
VISHAY DRALORIC
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Vishay Foil Resistors (Division of Vishay Precision Group)
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Vishay Huntington Electric Inc.
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Vishay Precision Group
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VISHAY ROEDERSTEIN
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Vishay Semiconductors
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VishayBC Components
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Manufacturer Vishay Vishay
Product Category MOSFETs MOSFETs
RoHS - XON e e
Id - Continuous Drain Current 16 A 16 A
Vds - Drain-Source Breakdown Voltage 30 V 30 V
Rds On - Drain-Source Resistance 7 mOhms 7 mOhms
Transistor Polarity n - channel n - channel
Vgs - Gate-Source Breakdown Voltage 20 V 20 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 3.5 W 3.5 W
Mounting Style smd/smt smd/smt
Package / Case SO - 8 SO - 8
Packaging Reel Reel
Channel Mode enhancement enhancement
Tradename trenchfet trenchfet
Configuration single single
Brand Vishay / Siliconix Vishay / Siliconix
Fall Time 10 ns 10 ns
Rise Time 10 ns 10 ns
Factory Pack Quantity : 2500 2500
Typical Turn-Off Delay Time 44 ns 44 ns