New Product Si4835DDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 d V (V) R () Q (Typ.) I (A) DS DS(on) g D Available 0.018 at V = - 10 V - 13 TrenchFET Power MOSFET GS - 30 22 nC 100 % R Tested 0.030 at V = - 4.5 V - 10 g GS 100 % UIS Tested APPLICATIONS Load Switches - Notebook PCs - Desktop PCs SO-8 S S 1 8 D S D 2 7 G S 3 6 D G D 4 5 Top View D Ordering Information: Si4835DDY-T1-E3 (Lead (Pb)-free) Si4835DDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V - 30 DS V V Gate-Source Voltage 25 GS T = 25 C - 13 C T = 70 C - 10.5 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 8.7 A a, b T = 70 C - 7.7 A A I - 50 Pulsed Drain Current DM - 4.6 T = 25 C C I Continuous Source-Drain Diode Current S a, b T = 25 C 2.0 A Avalanche Current I - 20 AS L = 0.1 mH Single-Pulse Avalanche Energy E 20 mJ AS T = 25 C 5.6 C T = 70 C 3.6 C P Maximum Power Dissipation W D a, b T = 25 C 2.5 A a, b T = 70 C 1.6 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, c Maximum Junction-to-Ambient t 10 s R 39 50 thJA C/W R Maximum Junction-to-Foot Steady State 18 22 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 85 C/W. d. Based on T = 25 C. C Document Number: 69953 www.vishay.com S09-0136-Rev. B, 02-Feb-09 1New Product Si4835DDY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 30 V DS GS D V Temperature Coefficient V /T - 31 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 5.5 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 1.0 - 3.0 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 25 V 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 30 V, V = 0 V, T = 55 C - 5 DS GS J a I V - 10 V, V = - 10 V - 30 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 10 A 0.014 0.018 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 7 A 0.0245 0.030 GS D a g V = - 10 V, I = - 10 A 23 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1960 iss C V = - 15 V, V = 0 V, f = 1 MHz Output Capacitance 380 pF oss DS GS C Reverse Transfer Capacitance 325 rss V = - 15 V, V = - 10 V, I = - 10 A 43 65 DS GS D Q Total Gate Charge g 22 33 nC Q V = - 15 V, V = - 4.5 V, I = - 10 A Gate-Source Charge 6 gs DS GS D Q Gate-Drain Charge 11 gd R Gate Resistance f = 1 MHz 0.3 1.3 2.5 g t Turn-On Delay Time 11 22 d(on) t V = - 15 V, R = 3 Rise Time 13 25 r DD L t I - 5 A, V = - 10 V, R = 1 Turn-Off DelayTime 32 50 d(off) D GEN g t Fall Time 918 f ns t Turn-On Delay Time 44 70 d(on) t V = - 15 V, R = 3 Rise Time 100 160 r DD L t I - 5 A, V = - 4.5 V, R = 1 Turn-Off DelayTime 28 50 d(off) D GEN g t Fall Time 15 30 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 4.6 S C A Pulse Diode Forward Current I - 50 SM Body Diode Voltage V I = - 2 A, V = 0 V - 0.75 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 28 45 ns rr Body Diode Reverse Recovery Charge Q 20 40 nC rr I = - 2 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 13 a ns Reverse Recovery Rise Time t 15 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69953 2 S09-0136-Rev. B, 02-Feb-09
