Si4823DY Vishay Siliconix P-Channel 20 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 d V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.108 at V = - 4.5 V - 4.1 GS LITTLE FOOT Plus Schottky - 20 4 nC 0.175 at V = - 2.5 V - 3.3 GS 100 % R Tested g Compliant to RoHS Directive 2002/95/EC SCHOTTKY PRODUCT SUMMARY APPLICATIONS V (V) f a V (V) Diode Forward Voltage I (A) KA F Portable Devices - Ideal for Boost Circuits 30 0.5 at 1 A 2 - Ideal for Book Circuits S K SO-8 AK 1 8 AK 2 7 G SD 3 6 GD 4 5 Top View D A Ordering Information: Si4823DY-T1-E3 (Lead (Pb)-free) Si4823DY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage (MOSFET) - 20 DS V Reverse Voltage (Schottky) 30 V KA V Gate-Source Voltage (MOSFET) 12 GS T = 25 C - 4.1 C T = 70 C - 3.3 C Continuous Drain Current (T = 150 C) (MOSFET) I J D b, c T = 25 C - 3.3 A b, c T = 70 C - 2.6 A Pulsed Drain Current (MOSFET) I - 15 A DM T = 25 C - 2.3 Continuous Source-Drain Diode Current C I S b, c (MOSFET Diode Conduction) T = 25 C - 1.4 A b Average Forward Current (Schottky) I - 2 F Pulsed Forward Current (MOSFET) I - 3 FM T = 25 C 2.8 C T = 70 C 1.8 C Maximum Power Dissipation (MOSFET) b, c T = 25 C 1.7 A b, c T = 70 C 1.1 A P W D T = 25 C 2.7 C T = 70 C 1.7 C Maximum Power Dissipation (Schottky) b, c T = 25 C 1.6 A b, c T = 70 C 1.0 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg Document Number: 64715 www.vishay.com S10-1051-Rev. C, 03-May-10 1Si4823DY Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit b, e Maximum Junction-to-Ambient (MOSFET) R 60 71.5 thJA R Maximum Junction-to-Foot (Drain) (MOSFET) 35 45 thJF C/W b, f Maximum Junction-to-Ambient (Schottky) R 63 78 thJA R Maximum Junction-to-Foot (Drain) (Schottky) 39 47 thJF Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. Based on T = 25 C. C e. Maximum under steady state conditions is 110 C/W. f. Maximum under steady state conditions is 115 C/W. SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 20 V DS GS D V Temperature Coefficient V /T - 20 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 3 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 0.6 - 1.5 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 12 V 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a On-State Drain Current I V 5 V, V = - 4.5 V - 15 A D(on) DS GS V = - 4.5 V, I = - 3.3 A 0.090 0.108 GS D a Drain-Source On-State Resistance R DS(on) V = - 2.5 V, I = - 2.6 A 0.140 0.175 GS D a Forward Transconductance g V = - 10 V, I = - 3.3 A 6 S fs DS D b Dynamic Input Capacitance C 330 660 iss Output Capacitance C 80V = - 10 V, V = 0 V, f = 1 MHz160 pF oss DS GS Reverse Transfer Capacitance C 57114 rss V = - 10 V, V = - 10 V, I = - 3.3 A 8 12 DS GS D Total Gate Charge Q g 46 nC Gate-Source Charge Q V = - 10 V, V = - 4.5 V, I = - 3.3 A 0.8 gs DS GS D Gate-Drain Charge Q 1.4 gd Gate Resistance R f = 1 MHz 1.2 6 12 g Turn-On Delay Time t 36 d(on) Rise Time t 10 20 V = - 10 V, R = 3.8 r DD L I - 2.6 A, V = - 10 V, R = 1 Turn-Off DelayTime t 1624 D GEN g d(off) Fall Time t 815 f ns Turn-On Delay Time t 18 27 d(on) Rise Time t 40 60 V = - 10 V, R = 3.8 r DD L I - 2.6 A, V = - 4.5 V, R = 1 Turn-Off DelayTime t 1827 D GEN g d(off) Fall Time t 10 15 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 6.2 S C A Pulse Diode Forward Current I - 15 SM Body Diode Voltage V I = - 2.6 A, V = 0 V - 0.8 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 23 35 ns rr Body Diode Reverse Recovery Charge Q 14 21 nC rr I = - 2.6 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 11 a ns Reverse Recovery Rise Time t 12 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. www.vishay.com Document Number: 64715 2 S10-1051-Rev. C, 03-May-10